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SN74LVC2G66DCURE4

Texas Instruments

SN74LVC2G66DCURE4 by Texas Instruments

SN74LVC2G66DCURE4 by Texas Instruments is a CMOS SPST switch with 2 functions, 8 terminals, and 20 ohm max on-state resistance. It operates b/w -40 to 85°C, has a supply voltage range of 1.65V to 5.5V, and offers separate outputs for industrial applications requiring fast switching times under tight space constraints.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 51,210 parts In-Stock

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Vyrian

USA . 6,918 parts In-Stock

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Digiode

USA . 1,700 parts In-Stock

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Nova Conductors

Japan . 750 parts In-Stock

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750

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One Stop Electronics

USA . 157 parts In-Stock

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$1.500

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Semicontronic

India . 1,505 parts In-Stock

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$3.500

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$3.412

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$3.395

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Ampacity Inc.

Singapore . 760 parts In-Stock

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$3.500

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Parana Technologies

USA . 683 parts In-Stock

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$12.485

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$12.927

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$12.927

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DigiPath Technology Company

USA . 223 parts In-Stock

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$13.747

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ChromeModa Solutions

Germany . 2,259 parts In-Stock

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$14.028

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$11.503

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IDEA Electronic Components Group

UK . 1,721 parts In-Stock

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$14.028

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$13.327

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$12.625

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AZTECH Wire

Italy . 424 parts In-Stock

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Corohmni

South Africa . 238 parts In-Stock

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Continental Prestige Electronics

USA . 5,329 parts In-Stock

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Argo Parts USA

USA . 1,345 parts In-Stock

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Microchip USA

USA . 1,240 parts In-Stock

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Bastille Electronics

Australia . 450 parts In-Stock

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Corphita

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336

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Overview

Elevate your electronic designs with the SN74LVC2G66DCURE4 by Texas Instruments. Crafted with precision and expertise, this multiplexer ensures seamless switching capabilities for your circuits. With its compact packaging and high-quality materials, this switch offers reliability and durability for industrial-grade applications. Experience superior performance with quick response times and minimal on-state resistance. Trust in Texas Instruments to deliver cutting-edge technology that enhances your projects. Choose the SN74LVC2G66DCURE4 for unparalleled value and efficiency in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability for the product.

Surface Mount: YES

Allows for easy installation on circuit boards.

No. of Functions: 2

Offers versatility and flexibility in usage.

Nominal Supply Voltage (Vsup): 2.3 V

Optimal voltage for efficient performance.

Power Supplies (V): 3.3

Compatible with common power sources.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures in industrial environments.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed.

Nominal Off-state Isolation: 42 dB

Provides strong isolation between channels for clean and reliable signals.

Technical Specifications

Multiplexers & Switches SN74LVC2G66DCURE4 attributes and parameters. Explore more Multiplexers & Switches devices from Texas Instruments

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

2.3 mm

Moisture Sensitivity Level (MSL):

1

Normal Position (V):

NO

No. of Channels:

1

No. of Functions:

2

No. of Terminals:

8

Nominal Off-state Isolation:

42 dB

Nominal On-state Resistance Match:

5 ohm

Maximum On-state Resistance (Ron):

20 ohm

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Sub-Category:

Multiplexers or Switches

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage (Vsup):

2.3 V

Surface Mount:

YES

Maximum Switch-off Time:

6.9 ns

Maximum Switch-on Time:

5.6 ns

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width (mm):

2 mm

Trade Compliance

SN74LVC2G66DCURE4 Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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