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SN65MLVD200DRG4

Texas Instruments

SN65MLVD200DRG4 by Texas Instruments

SN65MLVD200DRG4 by Texas Instruments is a Line Driver & Receiver with 3.6V max supply voltage, 4.1ns max transmit delay, and 85°C max operating temp. Ideal for industrial applications requiring differential output and EIA-899/TIA-899 interface standard compliance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,602 parts In-Stock

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Digiode

USA . 210 parts In-Stock

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AZTECH Wire

Italy . 404 parts In-Stock

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$6.795

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404

$6.795

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Parana Technologies

USA . 1,510 parts In-Stock

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$9.486

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$10.092

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DigiPath Technology Company

USA . 1,318 parts In-Stock

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$10.445

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$9.609

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ChromeModa Solutions

Germany . 3,117 parts In-Stock

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$10.658

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$8.740

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IDEA Electronic Components Group

UK . 618 parts In-Stock

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$10.658

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$10.125

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$9.592

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618

$10.658

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$9.592

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One Stop Electronics

USA . 127 parts In-Stock

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$34.500

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Corphita

USA . 3,283 parts In-Stock

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Microchip USA

USA . 2,483 parts In-Stock

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Kepictronics

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Overview

Enhance your electronic systems with the SN65MLVD200DRG4 by Texas Instruments, a top-tier manufacturer known for delivering superior quality products. As a leading line driver & receiver in its category, this device offers unmatched reliability and efficiency for a wide range of applications. With advanced technology and precision engineering, customers can expect seamless performance, improved signal transmission, and enhanced functionality. Elevate your projects with the value and benefits that only Texas Instruments can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protects the internal components of the product, ensuring a longer lifespan.

Maximum Supply Voltage: 3.6 V

The high maximum supply voltage allows for compatibility with a wide range of devices and systems.

Maximum Transmit Delay: 4.1 ns

The low transmit delay ensures fast and efficient signal transmission, making this product suitable for high-speed applications.

Power Supplies (V): 3.3

The standard power supply voltage of 3.3V makes this product compatible with many existing systems and reduces the need for additional power conversion circuits.

Maximum High Level Input Current: 0.00001 Amp

The low input current requirement minimizes power consumption and heat generation, making the product energy-efficient.

Output Characteristics: DIFFERENTIAL

Differential output allows for better noise immunity and signal integrity over long distances, making this product ideal for communication applications.

Temperature Grade: INDUSTRIAL

With industrial temperature grade specifications, this product is suitable for use in harsh environments and wide temperature ranges.

Interface Standard: EIA-899; TIA-899

Compliance with industry interface standards ensures interoperability and compatibility with a variety of communication protocols and systems.

Technical Specifications

Line Drivers & Receivers SN65MLVD200DRG4 attributes and parameters. Explore more Line Drivers & Receivers devices from Texas Instruments

Specs

Differential Output:

YES

Driver No. of Bits:

1

Maximum High Level Input Current:

.00001 Amp

Input Characteristics:

DIFFERENTIAL SCHMITT TRIGGER

Interface IC Type:

Interface Standard:

EIA-899; TIA-899

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Minimum Out Swing:

.48 V

Output Characteristics:

DIFFERENTIAL

Maximum Output Low Current:

8 Amp

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Receive Delay:

6.7 ns

Receiver No. of Bits:

1

Maximum Seated Height:

1.75 mm

Sub-Category:

Line Driver or Receivers

Maximum Supply Current:

26 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage-1:

3.6 V

Minimum Supply Voltage-1:

3 V

Nominal Supply Voltage-1:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Transmit Delay:

4.1 ns

Width:

3.9 mm

Trade Compliance

SN65MLVD200DRG4 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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