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SN65LVDS250DBTRG4

Texas Instruments

SN65LVDS250DBTRG4 by Texas Instruments

SN65LVDS250DBTRG4 by Texas Instruments is a BICMOS technology-based cross point switch with 4 channels. It operates at a supply voltage range of 3V to 3.6V and has a max seated height of 1.2mm, making it suitable for industrial applications requiring fast switching times up to 300ns. This small outline package with gull wing terminals is designed for surface mount assembly in temperature-sensitive environments from -40°C to 85°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,449 parts In-Stock

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4,449

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Digiode

USA . 639 parts In-Stock

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639

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Distributors (Availability)

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Semicontronic

India . 1,056 parts In-Stock

1+ parts

$1.500

100+ parts

$1.462

1k+ parts

$1.455

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1,056

$1.500

$1.462

$1.455

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Ampacity Inc.

Singapore . 820 parts In-Stock

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$3.500

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820

$3.500

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One Stop Electronics

USA . 500 parts In-Stock

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$3.500

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500

$3.500

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Parana Technologies

USA . 1,773 parts In-Stock

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$12.770

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$13.237

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1,773

$12.770

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$13.237

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IDEA Electronic Components Group

UK . 2,002 parts In-Stock

1+ parts

$14.348

100+ parts

$13.631

1k+ parts

$12.913

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2,002

$14.348

$13.631

$12.913

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ChromeModa Solutions

Germany . 1,713 parts In-Stock

1+ parts

$14.348

100+ parts

$11.765

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1,713

$14.348

$11.765

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AZTECH Wire

Italy . 449 parts In-Stock

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$17.537

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449

$17.537

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Corphita

USA . 3,203 parts In-Stock

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DigiPath Technology Company

USA . 2,274 parts In-Stock

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$12.936

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2,274

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$12.936

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Microchip USA

USA . 1,629 parts In-Stock

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Corohmni

South Africa . 101 parts In-Stock

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Overview

Enhance your electronic designs with the SN65LVDS250DBTRG4 from Texas Instruments, a leading manufacturer known for high-quality components. This multiplexer & switch offers versatile applications and outstanding performance, making it a valuable choice for your projects. With its reliable operation, compact design, and industrial-grade temperature range, this IC provides customers with enhanced functionality and efficiency. Trust Texas Instruments for superior technology that drives innovation in your circuits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is lightweight and durable, making the product easy to handle and resistant to damage.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving time and effort in production.

Nominal Supply Voltage (Vsup): 3.3 V

Optimal supply voltage of 3.3V ensures efficient performance and compatibility with a variety of systems and devices.

No. of Terminals: 38

Having 38 terminals allows for versatile connections and configurations, enabling the product to handle complex switching functions.

Technology: BICMOS

Utilizing BICMOS technology provides a balance of high-speed operation and low power consumption, enhancing the overall performance of the product.

Technical Specifications

Multiplexers & Switches SN65LVDS250DBTRG4 attributes and parameters. Explore more Multiplexers & Switches devices from Texas Instruments

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G38

JESD-609 Code:

e4

Length:

9.7 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

4

No. of Functions:

1

No. of Terminals:

38

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP38,.25,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

.145 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Maximum Switch-off Time:

6 ns

Maximum Switch-on Time:

300 ns

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

4.4 mm

Trade Compliance

SN65LVDS250DBTRG4 Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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