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SN65LVDS125ADBTRG4

Texas Instruments

SN65LVDS125ADBTRG4 by Texas Instruments

Texas Instruments SN65LVDS125ADBTRG4 is a BICMOS cross point switch with 4 channels. It operates at -40 to 85°C, with Vsup ranging from 3V to 3.6V. This IC has a small outline package and separate outputs, suitable for industrial applications requiring fast switching times.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,038 parts In-Stock

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Digiode

USA . 4,846 parts In-Stock

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4,846

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Distributors (Availability)

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One Stop Electronics

USA . 734 parts In-Stock

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$0.500

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734

$0.500

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Semicontronic

India . 944 parts In-Stock

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$3.500

100+ parts

$3.412

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$3.395

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944

$3.500

$3.412

$3.395

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Parana Technologies

USA . 1,331 parts In-Stock

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$4.616

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$5.086

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1,331

$4.616

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$5.086

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DigiPath Technology Company

USA . 1,892 parts In-Stock

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$5.082

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$5.082

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ChromeModa Solutions

Germany . 3,039 parts In-Stock

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$5.186

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$4.253

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3,039

$5.186

$4.253

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IDEA Electronic Components Group

UK . 2,054 parts In-Stock

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$5.186

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$4.667

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2,054

$5.186

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$4.667

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Ampacity Inc.

Singapore . 698 parts In-Stock

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$6.500

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698

$6.500

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AZTECH Wire

Italy . 511 parts In-Stock

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$16.980

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511

$16.980

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QUARKTWIN TECHNOLOGY LTD

USA . 19,423 parts In-Stock

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Microchip USA

USA . 4,812 parts In-Stock

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Corphita

USA . 2,042 parts In-Stock

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Corohmni

South Africa . 104 parts In-Stock

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Overview

Unlock the power of seamless data transmission with the SN65LVDS125ADBTRG4 by Texas Instruments. This premium multiplexer offers unparalleled quality and reliability, thanks to the renowned craftsmanship of its manufacturer. Ideal for a wide range of applications in the multiplexers & switches category, this product delivers exceptional value and benefits to customers seeking efficient and high-performance solutions. Experience the advantages of superior technology and precision engineering with the SN65LVDS125ADBTRG4, setting new standards in industrial-grade components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material ensures durability and reliability for long-term use.

Surface Mount: YES

Surface mount capability makes it easy to integrate into electronic circuits and PCBs.

Nominal Supply Voltage (Vsup): 3.3 V

Operates at a common supply voltage, making it compatible with various systems.

No. of Terminals: 38

Having 38 terminals allows for multiple connections and enhanced functionality.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures stable performance in various environmental conditions.

Technology: BICMOS

Utilizing BiCMOS technology combines the advantages of both bipolar and CMOS technologies for improved performance.

Moisture Sensitivity Level (MSL): 2

MSL level 2 indicates that this product can withstand standard moisture exposure levels during storage and handling.

Technical Specifications

Multiplexers & Switches SN65LVDS125ADBTRG4 attributes and parameters. Explore more Multiplexers & Switches devices from Texas Instruments

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G38

JESD-609 Code:

e4

Length:

9.7 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

4

No. of Functions:

1

No. of Terminals:

38

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP38,.25,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

.145 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Maximum Switch-off Time:

6 ns

Maximum Switch-on Time:

300 ns

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

4.4 mm

Trade Compliance

SN65LVDS125ADBTRG4 Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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