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RC4558IDGKRG4

Texas Instruments

RC4558IDGKRG4 by Texas Instruments

RC4558IDGKRG4 by Texas Instruments is a dual operational amplifier with 7500uV max input offset voltage and 90dB nominal CMRR. Ideal for industrial applications, it operates at -40 to 85 °C with ±15V supplies, offering a unity gain bandwidth of 3000kHz.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,842 parts In-Stock

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7,842

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Digiode

USA . 3,653 parts In-Stock

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3,653

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Distributors (Availability)

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Parana Technologies

USA . 1,224 parts In-Stock

1+ parts

$5.948

100+ parts

-

1k+ parts

$6.728

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1,224

$5.948

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$6.728

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DigiPath Technology Company

USA . 642 parts In-Stock

1+ parts

$6.549

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642

$6.549

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IDEA Electronic Components Group

UK . 2,006 parts In-Stock

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$6.683

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$6.015

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2,006

$6.683

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$6.015

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ChromeModa Solutions

Germany . 1,592 parts In-Stock

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$6.683

100+ parts

$5.480

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1,592

$6.683

$5.480

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One Stop Electronics

USA . 845 parts In-Stock

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$8.410

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845

$8.410

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AZTECH Wire

Italy . 398 parts In-Stock

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$19.456

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398

$19.456

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Corphita

USA . 4,063 parts In-Stock

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Microchip USA

USA . 1,412 parts In-Stock

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Overview

Unlock the potential of your electronic designs with the Texas Instruments RC4558IDGKRG4 operational amplifier. Manufactured to the highest standards, this versatile component offers precision, reliability, and performance for a wide range of applications. Whether you're working on audio equipment, control systems, or signal processing circuits, this op amp delivers exceptional value, superior functionality, and unmatched quality. Trust in Texas Instruments to power your innovation with the RC4558IDGKRG4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier, making it suitable for various environmental conditions.

Maximum Input Offset Voltage: 7500 uV

Low input offset voltage ensures accurate amplification of input signals, resulting in a precise output.

Maximum Average Bias Current (IIB): 0.8 uA

Low bias current minimizes power consumption and enhances the stability of the operational amplifier.

Surface Mount: YES

Enables easy installation and compact integration onto circuit boards, saving space and simplifying assembly.

Nominal Common Mode Reject Ratio: 90 dB

High common mode rejection ratio indicates the amplifier's ability to suppress common-mode noise interference, ensuring clean and accurate signal amplification.

Frequency Compensation: YES

Ensures stability and prevents oscillations in the amplifier's operation, resulting in reliable performance.

Nominal Unity Gain Bandwidth: 3000 kHz

High unity gain bandwidth allows for efficient amplification of high-frequency signals, making this operational amplifier suitable for a wide range of applications.

Technical Specifications

Operational Amplifiers (Op Amps) RC4558IDGKRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±15 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

3 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Minimum Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

7500 uV

Minimum Voltage Gain:

15000

Minimum Slew Rate:

1.1 V/us

Nominal Slew Rate:

1.7 V/us

Maximum Input Offset Current (IIO):

200 nA

Peak Bias Current:

800 nA

Maximum Bias Current (IIB) @25 °C:

500 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

5.6 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold/Silver

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

RC4558IDGKRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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