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PRM57L843ZWTT

Texas Instruments

PRM57L843ZWTT by Texas Instruments

Texas Instruments PRM57L843ZWTT microcontroller features 32-bit architecture, 22-bit address bus, and 128K data EEPROM. Ideal for industrial applications with CAN, Ethernet, I2C connectivity options and operating temperature range of -40 to 105°C. Max clock frequency of 80 MHz supports high-speed operations.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 8,011 parts In-Stock

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Digiode

USA . 3,970 parts In-Stock

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Prism Electronics

USA . 10 parts In-Stock

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Parana Technologies

USA . 1,137 parts In-Stock

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$15.125

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$15.529

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AZTECH Wire

Italy . 573 parts In-Stock

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$15.189

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One Stop Electronics

USA . 828 parts In-Stock

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$16.000

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ChromeModa Solutions

Germany . 4,183 parts In-Stock

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$16.994

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$13.935

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IDEA Electronic Components Group

UK . 1,728 parts In-Stock

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$16.994

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$16.144

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$15.295

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Corphita

USA . 2,523 parts In-Stock

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DigiPath Technology Company

USA . 621 parts In-Stock

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$15.322

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Microchip USA

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Overview

Experience the cutting-edge technology of the PRM57L843ZWTT microcontroller by Texas Instruments, a leader in semiconductor manufacturing. This powerful device offers a wide range of applications in various industries thanks to its high-quality construction and innovative features. With a focus on efficiency and reliability, this microcontroller provides customers with unparalleled value, performance, and versatility. Whether you're working on automotive systems, industrial automation, or consumer electronics, the PRM57L843ZWTT is the perfect solution to meet your needs and exceed your expectations. Trust Texas Instruments for excellence in microcontrollers and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product suitable for a variety of applications while keeping the overall weight of the device low.

Maximum Supply Voltage: 1.32 V

With a relatively high maximum supply voltage, this microcontroller can handle a wide range of input voltages, providing flexibility in power supply options.

Bit Size: 32

The 32-bit architecture allows for faster processing and greater memory capacity, making the microcontroller capable of handling complex tasks efficiently.

ADC Channels: YES

The presence of Analog to Digital Convertor channels allows the microcontroller to interface with analog sensors and signals, expanding its range of applications.

ROM Words: 4194304

With a large ROM capacity, the microcontroller can store a significant amount of program instructions and data, enabling the implementation of more complex algorithms and functions.

Maximum Clock Frequency: 80 MHz

The high clock frequency ensures fast processing speeds, making the microcontroller suitable for applications that require quick response times or real-time processing.

RAM Bytes: 524288

The large RAM size provides ample space for storing variables and temporary data during program execution, facilitating efficient multitasking and data processing.

Connectivity: CAN(4), ETHERNET, I2C(2), LIN(2), MIBSPI(5), SCI(4)

The versatile connectivity options allow the microcontroller to communicate with a wide range of devices and networks, enhancing its flexibility and compatibility in diverse systems.

Technical Specifications

Microcontrollers PRM57L843ZWTT attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

22

Bit Size:

32

Maximum Clock Frequency:

80 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

16

JESD-30 Code:

S-PBGA-B337

Length:

16 mm

No. of I/O Lines:

168

No. of Terminals:

337

On Chip Program ROM Width:

8

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

RAM Bytes:

524288

ROM Words:

4194304

ROM Programmability:

FLASH

Maximum Seated Height:

1.4 mm

Speed:

330 rpm

Maximum Supply Voltage:

1.32 V

Minimum Supply Voltage:

1.14 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

16 mm

Peripheral IC Type:

Data EEPROM Size:

128K

Connectivity:

CAN(4), ETHERNET, I2C(2), LIN(2), MIBSPI(5), SCI(4)

Peripherals:

CAP(6), DMA(32), POR, PWM(14), QEP(2), TIMER(64), WDT

Analog To Digital Convertors:

41-Ch 12-Bit

Trade Compliance

PRM57L843ZWTT Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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