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PREF4132B40DBVRQ1

Texas Instruments

PREF4132B40DBVRQ1 by Texas Instruments

PREF4132B40DBVRQ1 by Texas Instruments is a voltage reference IC with 4.096V output, 30 ppm/°C max temp coef, and AEC-Q100 screening for automotive applications. It operates b/w -40 to 125 °C, has a small outline package style, and requires min 4.143952V supply voltage.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,983 parts In-Stock

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Digiode

USA . 3,763 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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Parana Technologies

USA . 173 parts In-Stock

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$1.227

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$2.011

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173

$1.227

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$2.011

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DigiPath Technology Company

USA . 987 parts In-Stock

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$1.351

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987

$1.351

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IDEA Electronic Components Group

UK . 1,680 parts In-Stock

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$1.379

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$1.241

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$1.379

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ChromeModa Solutions

Germany . 1,366 parts In-Stock

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$1.379

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$1.131

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$1.379

$1.131

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One Stop Electronics

USA . 757 parts In-Stock

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$2.500

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757

$2.500

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Ampacity Inc.

Singapore . 629 parts In-Stock

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$4.500

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629

$4.500

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Semicontronic

India . 1,426 parts In-Stock

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$5.500

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$5.362

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$5.335

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$5.500

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$5.335

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AZTECH Wire

Italy . 700 parts In-Stock

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$10.633

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Corohmni

South Africa . 519 parts In-Stock

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$21.098

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Continental Prestige Electronics

USA . 6,019 parts In-Stock

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Argo Parts USA

USA . 2,121 parts In-Stock

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Corphita

USA . 1,645 parts In-Stock

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Bastille Electronics

Australia . 120 parts In-Stock

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Advanced Electronics

New Zealand . 52 parts In-Stock

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Overview

Elevate your electronic designs with the PREF4132B40DBVRQ1 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality voltage references that are perfect for a wide range of applications. With a small outline, low profile package style and automotive-grade temperature grade, this voltage reference offers precise output voltage and minimal voltage tolerance. Trust in Texas Instruments to provide reliable components that enhance the performance of your products.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components, ensuring the longevity of the voltage reference.

Surface Mount: YES

Allows for easy and convenient assembly onto circuit boards, saving time and effort in the manufacturing process.

Screening Level: AEC-Q100

Meets automotive industry standards for reliability and quality, making it suitable for automotive applications.

Minimum Output Voltage: 4.093952 V

Provides a stable and accurate reference voltage for various electronic circuits.

Maximum Operating Temperature: 125 °C

Ensures the voltage reference can operate efficiently in high-temperature environments without performance degradation.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the voltage reference efficient and reliable.

Nominal Output Voltage: 4.096 V

Provides a standardized reference voltage for precise and consistent performance in electronic systems.

Technical Specifications

Voltage References PREF4132B40DBVRQ1 attributes and parameters. Explore more Voltage References devices from Texas Instruments

Specs

JESD-30 Code:

R-PDSO-G5

Length:

2.9 mm

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

.01 A

Maximum Output Voltage:

4.098048 V

Minimum Output Voltage:

4.093952 V

Nominal Output Voltage:

4.096 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Screening Level:

AEC-Q100

Maximum Seated Height:

1.45 mm

Maximum Supply Current (Isup):

.1 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.143952 V

Surface Mount:

YES

Technology:

CMOS

Max Voltage Temp Coef:

30 ppm/Cel

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Trim or Adjustable Output (V):

NO

Maximum Voltage Tolerance:

.05 %

Width (mm):

1.6 mm

Trade Compliance

PREF4132B40DBVRQ1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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