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POPA2189IDR

Texas Instruments

POPA2189IDR by Texas Instruments

The Texas Instruments POPA2189IDR is an Operational Amplifier with 2 functions, offering a max supply voltage of 20V and unity gain bandwidth of 8MHz. Ideal for automotive applications due to its wide temperature range (-40 to 125°C) and high common mode reject ratio (168dB).

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,585 parts In-Stock

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Digiode

USA . 951 parts In-Stock

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951

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Distributors (Availability)

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One Stop Electronics

USA . 891 parts In-Stock

1+ parts

$1.410

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891

$1.410

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Parana Technologies

USA . 958 parts In-Stock

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$2.551

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$236.875

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$2.296

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958

$2.551

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$2.296

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DigiPath Technology Company

USA . 733 parts In-Stock

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$2.809

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733

$2.809

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IDEA Electronic Components Group

UK . 1,575 parts In-Stock

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$2.866

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$2.579

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$2.866

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$2.579

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ChromeModa Solutions

Germany . 250 parts In-Stock

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$2.866

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$2.350

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250

$2.866

$2.350

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Corohmni

South Africa . 133 parts In-Stock

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$3.202

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$3.202

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Advanced Electronics

New Zealand . 150 parts In-Stock

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$3.256

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$3.093

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$3.093

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$3.256

$3.093

$3.093

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Ampacity Inc.

Singapore . 1,503 parts In-Stock

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$8.410

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$8.410

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Semicontronic

India . 1,414 parts In-Stock

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$9.410

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$9.175

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$9.128

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1,414

$9.410

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AZTECH Wire

Italy . 231 parts In-Stock

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$17.972

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$17.972

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Argo Parts USA

USA . 3,172 parts In-Stock

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Corphita

USA . 2,477 parts In-Stock

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Continental Prestige Electronics

USA . 1,439 parts In-Stock

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Bastille Electronics

Australia . 99 parts In-Stock

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99

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Overview

Experience unparalleled performance and reliability with the Texas Instruments POPA2189IDR Operational Amplifier. Crafted by a trusted industry leader, this high-quality component is perfect for a wide range of applications. Whether you're designing automotive systems or precision instruments, this small outline package offers exceptional value with its low bias current and high common mode rejection ratio. Trust Texas Instruments to deliver the benefits and advantages you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and reliability for the operational amplifier, making it suitable for a variety of applications.

Maximum Average Bias Current (IIB): 0.01 uA

Low bias current helps in minimizing errors and improving the overall performance of the operational amplifier.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation of the operational amplifier on circuit boards.

Nominal Common Mode Reject Ratio: 168 dB

High common mode reject ratio ensures efficient rejection of noise and interference, leading to accurate signal processing.

Maximum Supply Voltage Limit: 20 V

The high supply voltage limit provides versatility in the operational amplifier's application, allowing for use in various voltage requirements.

Maximum Operating Temperature: 125 °C

Wide operating temperature range enables the operational amplifier to function reliably in diverse environmental conditions.

Nominal Unity Gain Bandwidth: 8000 kHz

High unity gain bandwidth results in improved signal fidelity and faster amplifier response, enhancing overall performance.

Technical Specifications

Operational Amplifiers (Op Amps) POPA2189IDR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

2

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Unity Gain Bandwidth:

8 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

168 dB

Nominal Slew Rate:

20 V/us

Peak Bias Current:

10 nA

Operational Characteristics

Maximum Supply Voltage:

20 V

Minimum Negative Supply Voltage:

-20 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Trade Compliance

POPA2189IDR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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