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POPA2182IDGKR

Texas Instruments

POPA2182IDGKR by Texas Instruments

The Texas Instruments POPA2182IDGKR is a dual operational amplifier with low-offset and low-bias features. It has a max input offset voltage of 4 uV, nominal unity gain bandwidth of 3600 kHz, and operates in automotive temperature grade. Ideal for precision applications requiring high common mode rejection ratio and low bias current.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,752 parts In-Stock

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4,752

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Nova Conductors

Japan . 870 parts In-Stock

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870

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Digiode

USA . 494 parts In-Stock

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494

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Distributors (Availability)

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Parana Technologies

USA . 655 parts In-Stock

1+ parts

$1.679

100+ parts

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$2.282

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655

$1.679

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$2.282

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ChromeModa Solutions

Germany . 3,803 parts In-Stock

1+ parts

$1.887

100+ parts

$1.547

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3,803

$1.887

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IDEA Electronic Components Group

UK . 917 parts In-Stock

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$1.887

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$1.698

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917

$1.887

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$1.698

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Corohmni

South Africa . 249 parts In-Stock

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$3.578

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$3.578

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Ampacity Inc.

Singapore . 1,115 parts In-Stock

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$5.410

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AZTECH Wire

Italy . 238 parts In-Stock

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$5.521

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$5.521

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One Stop Electronics

USA . 585 parts In-Stock

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$6.410

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585

$6.410

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$7.036

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$6.684

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$6.684

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$7.036

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$6.684

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Semicontronic

India . 134 parts In-Stock

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$9.410

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$9.175

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$9.128

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134

$9.410

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Corphita

USA . 4,452 parts In-Stock

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Continental Prestige Electronics

USA . 2,764 parts In-Stock

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DigiPath Technology Company

USA . 1,100 parts In-Stock

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$1.701

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Modulus Dynamics

Lithuania . 870 parts In-Stock

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Argo Parts USA

USA . 822 parts In-Stock

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822

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Elevate your electronic designs with the POPA2182IDGKR by Texas Instruments, a top-tier operational amplifier that guarantees precision and reliability. Crafted by the industry-leading manufacturer, this op amp offers unparalleled performance in a compact square package, making it ideal for automotive applications and beyond. With low-offset and low-bias features, this amplifier ensures optimal functionality while delivering exceptional value and benefits to customers seeking high-quality components for their projects. Upgrade your circuits today with the POPA2182IDGKR and experience the difference in performance and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring long-term reliability.

Maximum Input Offset Voltage: 4 uV

Ensures minimal error in the output signal due to voltage differentials, resulting in accurate amplification.

Surface Mount: YES

Enables easy and efficient installation on circuit boards, saving time during production.

Nominal Common Mode Reject Ratio: 168 dB

Offers high immunity to common mode noise, leading to clean and undistorted output signals.

Maximum Supply Voltage Limit: 20 V

Provides a wide operating voltage range for versatility in various applications.

Maximum Operating Temperature: 125 °C

Allows the amplifier to function reliably in elevated temperature environments.

Nominal Unity Gain Bandwidth: 3600 kHz

High bandwidth capability ensures fast response and accurate signal amplification.

Technical Specifications

Operational Amplifiers (Op Amps) POPA2182IDGKR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

Yes

Micropower:

No

Wideband:

No

Programmable Power:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

3.6 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

168 dB

Minimum Common Mode Rejection Ratio (CMRR ):

146 dB

Input Offset Voltage Limit:

4 uV

Minimum Voltage Gain:

31622776.6

Nominal Slew Rate:

10 V/us

Maximum Input Offset Current (IIO):

3 nA

Peak Bias Current:

350 pA

Maximum Bias Current (IIB) @25 °C:

350 pA

Operational Characteristics

Maximum Supply Voltage:

20 V

Minimum Negative Supply Voltage:

-20 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

2.2 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Standards

JESD-30 Code:

S-PDSO-G8

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.25

Trade Compliance

POPA2182IDGKR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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