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PLMV321AUQDBVRQ1

Texas Instruments

PLMV321AUQDBVRQ1 by Texas Instruments

Texas Instruments' PLMV321AUQDBVRQ1 is an Operational Amplifier with 5 terminals, Vsup of 5V, and 1000 kHz Unity Gain Bandwidth. Ideal for applications requiring low-bias, micropower amplification in automotive electronics due to AEC-Q100 screening and compact design. Features include 77 dB CMRR, -40 to 125 °C operating temp range, and VOLTAGE-FEEDBACK architecture.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,428 parts In-Stock

1+ parts

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5,428

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Digiode

USA . 2,781 parts In-Stock

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2,781

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 580 parts In-Stock

1+ parts

$0.410

100+ parts

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580

$0.410

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One Stop Electronics

USA . 1,160 parts In-Stock

1+ parts

$1.410

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1,160

$1.410

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Semicontronic

India . 1,576 parts In-Stock

1+ parts

$3.410

100+ parts

$3.325

1k+ parts

$3.308

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1,576

$3.410

$3.325

$3.308

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AZTECH Wire

Italy . 839 parts In-Stock

1+ parts

$6.273

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839

$6.273

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Corphita

USA . 1,402 parts In-Stock

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1,402

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Corohmni

South Africa . 119 parts In-Stock

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119

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Overview

Get ready to experience unmatched quality and performance with the PLMV321AUQDBVRQ1 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers cutting-edge Operational Amplifiers that are designed for precision and reliability. Whether you're in automotive, industrial, or consumer electronics, this product offers exceptional value with its low power consumption, high voltage gain, and wide temperature range. Elevate your designs with the PLMV321AUQDBVRQ1 and discover the perfect balance of quality and functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used for its durability and low cost, making the product more affordable and reliable.

Maximum Input Offset Voltage: 5000 uV

Low input offset voltage helps in minimizing errors in the output signal, ensuring accurate amplification of input signals.

Surface Mount: YES

Surface mount technology allows for easy installation on circuit boards, saving space and enabling automated assembly processes.

Nominal Common Mode Reject Ratio: 77 dB

High common mode rejection ratio indicates the ability to reject noise and interference, resulting in cleaner output signals.

Nominal Supply Voltage / Vsup (V): 5

Operating at a low supply voltage of 5V makes the product suitable for battery-powered applications and reduces power consumption.

Frequency Compensation: YES

Frequency compensation helps stabilize the amplifier's response at high frequencies, improving overall performance and preventing oscillations.

Nominal Unity Gain Bandwidth: 1000 kHz

High unity gain bandwidth allows for accurate amplification of signals across a wide range of frequencies, making it ideal for high-speed applications.

Amplifier Type: OPERATIONAL AMPLIFIER

Operational amplifiers are versatile and widely used in various applications such as signal processing, instrumentation, and control systems.

Technical Specifications

Operational Amplifiers (Op Amps) PLMV321AUQDBVRQ1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Total Functions:

1

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

77 dB

Minimum Common Mode Rejection Ratio (CMRR ):

63 dB

Input Offset Voltage Limit:

5000 uV

Minimum Voltage Gain:

100000

Nominal Slew Rate:

1.7 V/us

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

150 μA

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.057 in (1.45 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

R-PDSO-G5

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Low Profile, Shrink Pitch

Package Equivalence Code:

TSOP5/6,.11,37

Trade Compliance

PLMV321AUQDBVRQ1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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