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PGA102BG-BI

Texas Instruments

PGA102BG-BI by Texas Instruments

PGA102BG-BI by Texas Instruments is an instrumentation amplifier with 250uV max input offset voltage, 0.06uA max average bias current, and 1.5MHz nominal bandwidth. Ideal for precision signal conditioning in applications requiring high gain accuracy and low noise performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,470 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,470

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Digiode

USA . 2,060 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,060

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 531 parts In-Stock

1+ parts

$3.879

100+ parts

-

1k+ parts

$4.358

10k+ parts

-

531

$3.879

-

$4.358

-

DigiPath Technology Company

USA . 1,107 parts In-Stock

1+ parts

$4.271

100+ parts

$3.929

1k+ parts

-

10k+ parts

-

1,107

$4.271

$3.929

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ChromeModa Solutions

Germany . 2,230 parts In-Stock

1+ parts

$4.358

100+ parts

$3.574

1k+ parts

-

10k+ parts

-

2,230

$4.358

$3.574

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-

IDEA Electronic Components Group

UK . 1,317 parts In-Stock

1+ parts

$4.358

100+ parts

-

1k+ parts

$3.922

10k+ parts

-

1,317

$4.358

-

$3.922

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One Stop Electronics

USA . 1,657 parts In-Stock

1+ parts

$6.410

100+ parts

-

1k+ parts

-

10k+ parts

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1,657

$6.410

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-

-

AZTECH Wire

Italy . 596 parts In-Stock

1+ parts

$15.262

100+ parts

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596

$15.262

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Corphita

USA . 2,013 parts In-Stock

1+ parts

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2,013

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Overview

Experience unparalleled precision and performance with the PGA102BG-BI by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality instrumentation amplifiers for a wide range of applications. From medical devices to industrial equipment, this amplifier offers unmatched accuracy and reliability. Increase your system's efficiency and overall performance with the PGA102BG-BI, providing exceptional value and benefits to customers seeking the best in amplification technology. Elevate your projects with Texas Instruments' superior products today.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired material ensures durability and reliability in various environmental conditions.

Maximum Input Offset Voltage: 250 uV

Low input offset voltage helps in accurate signal processing and reduces errors in the measurement.

Nominal Supply Voltage / Vsup (V): 15

Optimal supply voltage for consistent performance and reliable operation.

Nominal Bandwidth (3dB): 1.5 MHz

Wide bandwidth allows for fast signal processing and high-frequency applications.

Maximum Voltage Gain: 100

High voltage gain enables amplification of weak signals with minimal distortion.

Technology: BIPOLAR

Bipolar technology offers high precision and low noise, ideal for sensitive measurements.

Amplifier Type: INSTRUMENTATION AMPLIFIER

Specifically designed for accurate signal amplification and rejection of common-mode signals, making it suitable for precise measurements.

Technical Specifications

Instrumentation Amplifiers PGA102BG-BI attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

Bipolar

Power Supply:

±15 V

Total Functions:

1

Sub-Category:

Instrumentation Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

1.5 MHz

Nominal Slew Rate:

9 V/us

Input Offset Voltage Limit:

250 µV

Peak Bias Current:

60 nA

Maximum Supply Current:

10.6 mA

Minimum Voltage Gain:

1

Nominal Voltage Gain:

10

Maximum Voltage Gain:

100

Maximum Non Linearity:

0.01 %

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-25 °C (-13 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Physical Characteristics

Length:

0.8 in (20.32 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.17 in (4.32 mm)

Total Terminals:

16

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Ceramic, Metal-Sealed Cofired

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-CDIP-T16

Packaging and Shipping

Package Code:

DIP

Package Shape:

Package Style:

In-Line

Package Equivalence Code:

DIP16,.3

Trade Compliance

PGA102BG-BI Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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