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PGA102AG

Texas Instruments

PGA102AG by Texas Instruments

PGA102AG by Texas Instruments is an instrumentation amplifier with 500uV max input offset voltage, 0.06uA max average bias current, and 1.5MHz nominal bandwidth. Ideal for precision signal conditioning in applications requiring high accuracy and low noise such as medical devices or industrial sensors.

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Vyrian

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Digiode

USA . 926 parts In-Stock

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Nova Conductors

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Infinite Electronics LLP

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Elcom Components

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LIBRA Elektronik GmbH

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Bristol Electronics

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Atlantic Semiconductor

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Parana Technologies

USA . 1,765 parts In-Stock

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DigiPath Technology Company

USA . 2,070 parts In-Stock

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$3.781

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ChromeModa Solutions

Germany . 3,320 parts In-Stock

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IDEA Electronic Components Group

UK . 1,548 parts In-Stock

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One Stop Electronics

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AZTECH Wire

Italy . 457 parts In-Stock

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Continental Prestige Electronics

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Corphita

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Argo Parts USA

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Bastille Electronics

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Assy Fe

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Overview

Enhance your electronic designs with the PGA102AG by Texas Instruments. Crafted from high-quality materials and boasting superior performance, this instrumentation amplifier offers unparalleled precision and reliability. Ideal for a wide range of applications, this product provides exceptional value to customers seeking top-notch amplification solutions. Elevate your projects with the PGA102AG and experience the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The use of ceramic and glass-sealed material ensures high reliability and stability in various operating conditions.

Maximum Input Offset Voltage: 500 uV

Low input offset voltage helps in reducing errors and improving accuracy in signal amplification.

Maximum Average Bias Current (IIB): 0.06 uA

Low bias current results in minimal power consumption and increased precision in signal amplification.

Nominal Supply Voltage / Vsup (V): 15

Stable supply voltage ensures consistent performance and reliable amplification of signals.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows for use in various environments without risk of damage or performance degradation.

Technical Specifications

Instrumentation Amplifiers PGA102AG attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

Bipolar

Power Supply:

±15 V

Total Functions:

1

Sub-Category:

Instrumentation Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

1.5 MHz

Nominal Slew Rate:

9 V/us

Input Offset Voltage Limit:

500 µV

Peak Bias Current:

60 nA

Maximum Supply Current:

5.3 mA

Minimum Voltage Gain:

1

Nominal Voltage Gain:

10

Maximum Voltage Gain:

100

Maximum Non Linearity:

0.01 %

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-25 °C (-13 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Physical Characteristics

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

16

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Ceramic, Glass-Sealed

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-GDIP-T16

Packaging and Shipping

Package Code:

DIP

Package Shape:

Package Style:

In-Line

Package Equivalence Code:

DIP16,.3

Trade Compliance

PGA102AG Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

NSN

5962-01-365-7500, 5962013657500

NIIN

013657500

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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