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OPA861IDR

Texas Instruments

OPA861IDR by Texas Instruments

OPA861IDR by Texas Instruments is an Operational Amplifier with a max input offset voltage of 20mV, 6.6uA bias current, and 80MHz unity gain bandwidth. Ideal for industrial applications requiring precise signal amplification in a compact package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,267 parts In-Stock

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5,267

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Digiode

USA . 301 parts In-Stock

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301

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Distributors (Availability)

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One Stop Electronics

USA . 1,520 parts In-Stock

1+ parts

$2.410

100+ parts

-

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1,520

$2.410

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Parana Technologies

USA . 1,805 parts In-Stock

1+ parts

$3.672

100+ parts

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$4.180

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1,805

$3.672

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$4.180

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DigiPath Technology Company

USA . 874 parts In-Stock

1+ parts

$4.043

100+ parts

$3.720

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874

$4.043

$3.720

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ChromeModa Solutions

Germany . 5,745 parts In-Stock

1+ parts

$4.126

100+ parts

$3.383

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5,745

$4.126

$3.383

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IDEA Electronic Components Group

UK . 2,301 parts In-Stock

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$4.126

100+ parts

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$3.713

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2,301

$4.126

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$3.713

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AZTECH Wire

Italy . 749 parts In-Stock

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$19.379

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749

$19.379

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QUARKTWIN TECHNOLOGY LTD

USA . 5,853 parts In-Stock

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Corphita

USA . 2,320 parts In-Stock

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Microchip USA

USA . 196 parts In-Stock

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Overview

Discover the exceptional performance and reliability of the Texas Instruments OPA861IDR operational amplifier. With a wide range of applications in industries such as automotive, industrial, and consumer electronics, this high-quality Op Amp offers unmatched precision and efficiency. Trust in Texas Instruments' reputation for superior manufacturing and innovation, and experience the value and benefits that the OPA861IDR brings to your projects. Unlock new possibilities and enhance your designs with this industry-leading component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the operational amplifier, ensuring reliability and durability.

Maximum Input Offset Voltage: 20000 uV

Low input offset voltage allows for accurate signal processing and minimal errors in the output.

Surface Mount: YES

Easy to integrate into circuit boards and saves space due to surface mount technology.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage for ease of use and compatibility with various applications.

Maximum Operating Temperature: 85 °C

Wide temperature range allows for operation in harsh environmental conditions.

Nominal Unity Gain Bandwidth: 80000 kHz

High unity gain bandwidth enables the operational amplifier to handle high-frequency signals with precision.

Technology: BIPOLAR

Bipolar technology offers good accuracy and stability in amplifying signals.

Nominal Slow Rate: 900 V/us

Fast slew rate allows for quick response to input signal changes, making the amplifier suitable for dynamic applications.

Technical Specifications

Operational Amplifiers (Op Amps) OPA861IDR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

BIPOLAR

Power Supply:

±5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Unity Gain Bandwidth:

80 MHz

Input Offset Voltage Limit:

20000 uV

Nominal Slew Rate:

900 V/us

Peak Bias Current:

6.6 uA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

6.5 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-6.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

7.4 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

OPA861IDR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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