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OPA684IDBVRG4

Texas Instruments

OPA684IDBVRG4 by Texas Instruments

OPA684IDBVRG4 by Texas Instruments is an operational amplifier with a max bandwidth of 210 MHz, ideal for industrial applications. It features a low input offset voltage of 3500 uV and a high slew rate of 225 V/us, ensuring precise signal processing in various electronic systems. With a compact package style and surface-mount capability, this op amp is suitable for space-constrained designs requiring high-speed performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,890 parts In-Stock

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Digiode

USA . 1,796 parts In-Stock

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1,796

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Distributors (Availability)

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Parana Technologies

USA . 629 parts In-Stock

1+ parts

$2.038

100+ parts

$189.268

1k+ parts

$1.834

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629

$2.038

$189.268

$1.834

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DigiPath Technology Company

USA . 241 parts In-Stock

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$2.244

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241

$2.244

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ChromeModa Solutions

Germany . 6,870 parts In-Stock

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$2.290

100+ parts

$1.878

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6,870

$2.290

$1.878

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IDEA Electronic Components Group

UK . 34 parts In-Stock

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$2.290

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$2.061

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34

$2.290

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$2.061

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One Stop Electronics

USA . 653 parts In-Stock

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$8.410

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653

$8.410

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AZTECH Wire

Italy . 192 parts In-Stock

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$17.268

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192

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A-Z Elektronik GmbH

Germany . 7,708 parts In-Stock

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Microchip USA

USA . 2,789 parts In-Stock

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Corphita

USA . 2,565 parts In-Stock

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Kepictronics

USA . 570 parts In-Stock

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Overview

Elevate your design with the OPA684IDBVRG4 by Texas Instruments, a top-of-the-line operational amplifier that delivers unparalleled performance and reliability. Designed with precision and expertise, this op amp is perfect for a wide range of applications in industrial settings. With a nominal unity gain bandwidth of 210000 kHz and a minimum slew rate of 225 V/us, this amplifier provides fast and accurate signal processing. Invest in the best with Texas Instruments and experience the unmatched quality and value that the OPA684IDBVRG4 has to offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and resistant to damage, ensuring the longevity of the product.

Maximum Input Offset Voltage: 3500 uV

Low offset voltage ensures accurate and precise output signals.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage makes it compatible with various circuits and applications.

Minimum Slew Rate: 225 V/us

Fast slew rate allows for quick response and signal processing.

Nominal Bandwidth (3dB): 210 MHz

High bandwidth allows for efficient and high-speed signal processing.

Architecture: CURRENT-FEEDBACK

Current-feedback architecture provides high speed and low distortion, suitable for demanding applications.

Amplifier Type: OPERATIONAL AMPLIFIER

Operational amplifiers are versatile and widely used in audio, instrumentation, and control applications.

Technical Specifications

Operational Amplifiers (Op Amps) OPA684IDBVRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Current Feedback

Technology:

BIPOLAR

Power Supply:

5/±5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

Yes

Programmable Power:

No

Performance Specifications

Nominal Bandwidth (3dB):

210 MHz

Nominal Unity Gain Bandwidth:

210 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

60 dB

Minimum Common Mode Rejection Ratio (CMRR ):

53 dB

Input Offset Voltage Limit:

3500 uV

Minimum Slew Rate:

225 V/us

Nominal Slew Rate:

820 V/us

Peak Bias Current:

10 uA

Maximum Bias Current (IIB) @25 °C:

10 uA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

6.5 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-6.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

1.8 mA

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.057 in (1.45 mm)

Total Terminals:

6

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Low Profile, Shrink Pitch

Package Equivalence Code:

TSOP6,.11,37

Trade Compliance

OPA684IDBVRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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