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OPA653IDBVR

Texas Instruments

OPA653IDBVR by Texas Instruments

OPA653IDBVR by Texas Instruments is a low-bias operational amplifier with a unity gain bandwidth of 500kHz. It features a max input offset voltage of 8900uV and operates in industrial temperature range. Ideal for applications requiring high precision and low power consumption in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,807 parts In-Stock

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Digiode

USA . 1,983 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 2,026 parts In-Stock

1+ parts

$4.988

100+ parts

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$5.538

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2,026

$4.988

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$5.538

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DigiPath Technology Company

USA . 1,054 parts In-Stock

1+ parts

$5.493

100+ parts

$5.053

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1,054

$5.493

$5.053

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ChromeModa Solutions

Germany . 2,202 parts In-Stock

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$5.605

100+ parts

$4.596

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2,202

$5.605

$4.596

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IDEA Electronic Components Group

UK . 1,288 parts In-Stock

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$5.605

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$5.044

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1,288

$5.605

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$5.044

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One Stop Electronics

USA . 964 parts In-Stock

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$8.410

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964

$8.410

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AZTECH Wire

Italy . 888 parts In-Stock

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$12.164

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888

$12.164

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A-Z Elektronik GmbH

Germany . 5,129 parts In-Stock

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Corphita

USA . 4,919 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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Overview

Elevate your electronic designs with the OPA653IDBVR by Texas Instruments, a cutting-edge operational amplifier that delivers unparalleled performance and reliability. Crafted by a trusted manufacturer known for excellence, this op amp is perfect for a wide range of applications. From audio amplification to sensor signal conditioning, this versatile component offers superior precision and efficiency. Experience seamless integration and optimal functionality with the OPA653IDBVR, setting new standards in operational amplifiers. Trust in Texas Instruments to provide you with the quality and innovation you need for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making it suitable for a variety of applications.

Maximum Input Offset Voltage: 8900 uV

Low input offset voltage allows for more accurate signal processing.

Nominal Common Mode Reject Ratio: 66 dB

High common mode rejection ratio helps in eliminating unwanted noise and interference from the signal.

Nominal Supply Voltage / Vsup (V): 6

Operating at a nominal supply voltage of 6V provides a balance between performance and power consumption.

Maximum Operating Temperature: 85 °C

A wide operating temperature range ensures reliable performance in different environmental conditions.

Technology: BIPOLAR

Bipolar technology offers high performance and stability for precision applications.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier, this product is suitable for various signal processing and amplification tasks.

Technical Specifications

Operational Amplifiers (Op Amps) OPA653IDBVR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±3.5/±6.5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

Yes

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

500 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

66 dB

Minimum Common Mode Rejection Ratio (CMRR ):

62 dB

Input Offset Voltage Limit:

8900 uV

Nominal Slew Rate:

2675 V/us

Peak Bias Current:

3.2 nA

Maximum Bias Current (IIB) @25 °C:

50 pA

Operational Characteristics

Nominal Supply Voltage:

6 V

Maximum Supply Voltage:

6.5 V

Maximum Negative Supply Voltage:

-6 V

Minimum Negative Supply Voltage:

-6.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

33 mA

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.057 in (1.45 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Low Profile, Shrink Pitch

Package Equivalence Code:

TSOP5/6,.11,37

Trade Compliance

OPA653IDBVR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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