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OPA637BPG4

Texas Instruments

OPA637BPG4 by Texas Instruments

OPA637BPG4 by Texas Instruments is an Operational Amplifier with low-offset and low-bias features. It offers a min slew rate of 100 V/us, nominal unity gain bandwidth of 80 kHz, and max input offset voltage of 250 uV. Ideal for applications requiring precise signal amplification in temperature-sensitive environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,554 parts In-Stock

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3,554

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Digiode

USA . 823 parts In-Stock

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823

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Distributors (Availability)

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Parana Technologies

USA . 3 parts In-Stock

1+ parts

$0.971

100+ parts

-

1k+ parts

$1.867

10k+ parts

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3

$0.971

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$1.867

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DigiPath Technology Company

USA . 2,179 parts In-Stock

1+ parts

$1.069

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2,179

$1.069

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IDEA Electronic Components Group

UK . 2,100 parts In-Stock

1+ parts

$1.091

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-

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$0.982

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2,100

$1.091

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$0.982

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ChromeModa Solutions

Germany . 1,508 parts In-Stock

1+ parts

$1.091

100+ parts

$0.895

1k+ parts

-

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1,508

$1.091

$0.895

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One Stop Electronics

USA . 172 parts In-Stock

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$3.410

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172

$3.410

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Ampacity Inc.

Singapore . 249 parts In-Stock

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$8.410

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249

$8.410

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AZTECH Wire

Italy . 624 parts In-Stock

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$11.652

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624

$11.652

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Perfect Parts

USA . 9,520 parts In-Stock

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9,520

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Corphita

USA . 3,988 parts In-Stock

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3,988

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Microchip USA

USA . 120 parts In-Stock

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120

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Overview

Experience unmatched precision and reliability with the Texas Instruments OPA637BPG4 operational amplifier. Crafted with cutting-edge technology and precision engineering, this op amp is designed to deliver exceptional performance in a wide range of applications. From audio equipment to medical devices, this amplifier offers superior low-offset and low-bias characteristics, ensuring optimal signal integrity and accuracy. Trust Texas Instruments to provide you with a high-quality solution that exceeds your expectations and enhances the performance of your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long lifespan for the operational amplifier.

Maximum Input Offset Voltage: 250 uV

Low input offset voltage helps minimize errors in signal processing, making this operational amplifier suitable for precision applications.

Nominal Common Mode Reject Ratio: 116 dB

High common mode rejection ratio helps in rejecting unwanted noise and interference, resulting in clear and accurate output signals.

Minimum Slew Rate: 100 V/us

Fast slew rate allows the operational amplifier to respond quickly to input changes, making it suitable for applications requiring rapid signal processing.

Nominal Unity Gain Bandwidth: 80000 kHz

Wide bandwidth ensures that the operational amplifier can handle high-frequency signals with minimal distortion, making it versatile for a variety of applications.

Technical Specifications

Operational Amplifiers (Op Amps) OPA637BPG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±15 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

Yes

Frequency Compensation:

YES (AVCL>=5)

Low-Bias:

Yes

Low-Offset:

Yes

Micropower:

No

Wideband:

Yes

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

80 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

116 dB

Minimum Common Mode Rejection Ratio (CMRR ):

106 dB

Input Offset Voltage Limit:

250 uV

Minimum Voltage Gain:

200000

Minimum Slew Rate:

100 V/us

Nominal Slew Rate:

135 V/us

Maximum Input Offset Current (IIO):

5 pA

Peak Bias Current:

1 nA

Maximum Bias Current (IIB) @25 °C:

5 pA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-25 °C (-13 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

7.5 mA

Physical Characteristics

Length:

0.386 in (9.81 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

OPA637BPG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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