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OPA353NA/3KG4

Texas Instruments

OPA353NA/3KG4 by Texas Instruments

OPA353NA/3KG4 by Texas Instruments is a CMOS Operational Amplifier with 10000uV Max Input Offset Voltage, 86dB Nominal CMRR, and 44000kHz Unity Gain Bandwidth. Ideal for industrial applications requiring low-bias amplification in a compact package with PLASTIC/EPOXY body material.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 14,950 parts In-Stock

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Vyrian

USA . 6,037 parts In-Stock

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Digiode

USA . 4,709 parts In-Stock

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Nova Conductors

Japan . 36 parts In-Stock

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Ampacity Inc.

Singapore . 349 parts In-Stock

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$1.410

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349

$1.410

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Parana Technologies

USA . 827 parts In-Stock

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$4.859

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$5.383

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827

$4.859

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DigiPath Technology Company

USA . 188 parts In-Stock

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$5.351

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$5.351

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ChromeModa Solutions

Germany . 2,747 parts In-Stock

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$5.460

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$4.477

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$5.460

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IDEA Electronic Components Group

UK . 2,138 parts In-Stock

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$5.460

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$4.914

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One Stop Electronics

USA . 714 parts In-Stock

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$8.410

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714

$8.410

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AZTECH Wire

Italy . 660 parts In-Stock

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$19.147

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A-Z Elektronik GmbH

Germany . 9,402 parts In-Stock

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Continental Prestige Electronics

USA . 4,739 parts In-Stock

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Argo Parts USA

USA . 3,113 parts In-Stock

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Kepictronics

USA . 2,066 parts In-Stock

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Corphita

USA . 2,055 parts In-Stock

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Microchip USA

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Bastille Electronics

Australia . 40 parts In-Stock

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Overview

Experience the unmatched precision and reliability of Texas Instruments with the OPA353NA/3KG4 Operational Amplifier. Designed with industry-leading technology, this amplifier offers superior performance in a compact package. Ideal for a wide range of applications, this Op Amp provides consistent and accurate results, making it a valuable asset for engineers and hobbyists alike. Trust in Texas Instruments to deliver quality products that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 10000 uV

Low input offset voltage ensures minimal error in the output signal, making this operational amplifier suitable for precision applications.

Surface Mount: YES

Surface mount capability makes it easy to integrate this operational amplifier into compact electronic designs.

Nominal Common Mode Reject Ratio: 86 dB

High common mode reject ratio helps in eliminating common mode noise, ensuring a clean output signal.

Nominal Supply Voltage / Vsup (V): 5

Works efficiently at a nominal supply voltage of 5V, suitable for a wide range of applications.

Technology: CMOS

CMOS technology provides low power consumption and high input impedance, making this operational amplifier energy-efficient and versatile.

Nominal Unity Gain Bandwidth: 44000 kHz

High unity gain bandwidth ensures stable performance even at high frequencies, making this operational amplifier ideal for fast signal processing.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier, this product is designed for amplifying and processing signals with high accuracy and efficiency.

Technical Specifications

Operational Amplifiers (Op Amps) OPA353NA/3KG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

44 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

86 dB

Minimum Common Mode Rejection Ratio (CMRR ):

76 dB

Input Offset Voltage Limit:

10000 uV

Minimum Voltage Gain:

100000

Nominal Slew Rate:

22 V/us

Maximum Input Offset Current (IIO):

10 pA

Peak Bias Current:

10 pA

Maximum Bias Current (IIB) @25 °C:

10 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

5.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

8 mA

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.057 in (1.45 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Low Profile, Shrink Pitch

Package Equivalence Code:

TSOP5/6,.11,37

Trade Compliance

OPA353NA/3KG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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