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OPA2333SKGD2

Texas Instruments

OPA2333SKGD2 by Texas Instruments

OPA2333SKGD2 by Texas Instruments is a CMOS operational amplifier with 10uV max input offset voltage, 130dB nominal CMRR, and 350kHz unity gain bandwidth. Ideal for military applications due to its -55 to 210 °C operating temperature range and low bias current of 0.0002uA.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,415 parts In-Stock

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Digiode

USA . 2,559 parts In-Stock

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2,559

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Distributors (Availability)

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Parana Technologies

USA . 1,179 parts In-Stock

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$1.692

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$2.290

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$1.692

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$2.290

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DigiPath Technology Company

USA . 398 parts In-Stock

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$1.863

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398

$1.863

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ChromeModa Solutions

Germany . 3,374 parts In-Stock

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$1.901

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$1.559

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IDEA Electronic Components Group

UK . 1,639 parts In-Stock

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$1.901

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$1.711

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One Stop Electronics

USA . 433 parts In-Stock

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$6.410

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433

$6.410

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AZTECH Wire

Italy . 666 parts In-Stock

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$11.422

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Corphita

USA . 1,970 parts In-Stock

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Microchip USA

USA . 1,703 parts In-Stock

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Overview

Enhance your electronic designs with the OPA2333SKGD2 operational amplifier by Texas Instruments. This high-quality chip provides precision and reliability, making it perfect for a wide range of applications. With low input offset voltage and bias current, this op amp delivers exceptional performance. Whether you're working on audio equipment, sensor interfaces, or control systems, the OPA2333SKGD2 offers unbeatable value and efficiency. Trust Texas Instruments to deliver top-notch components that elevate your projects to new heights.

Feature Benefit Bullets

Maximum Input Offset Voltage: 10 uV

Low offset voltage ensures accurate signal processing and minimizes errors in the output.

Maximum Average Bias Current (IIB): 0.0002 uA

Low bias current helps in maintaining stability and precision in the amplification process.

Surface Mount: YES

The surface mount feature makes it easy to integrate into compact electronic designs.

Nominal Common Mode Reject Ratio: 130 dB

High common mode rejection ratio ensures suppression of unwanted noise and interference.

Nominal Supply Voltage / Vsup (V): 5

Operates efficiently at a standard supply voltage of 5V, suitable for many electronic applications.

Maximum Operating Temperature: 210 °C

Wide operating temperature range allows for reliable performance in various environmental conditions.

Technology: CMOS

Utilizing CMOS technology provides low power consumption and high input impedance.

Nominal Unity Gain Bandwidth: 350 kHz

The high bandwidth allows for fast and accurate signal amplification.

Technical Specifications

Operational Amplifiers (Op Amps) OPA2333SKGD2 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Total Functions:

2

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Unity Gain Bandwidth:

350 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

130 dB

Input Offset Voltage Limit:

10 uV

Nominal Slew Rate:

0.16 V/us

Peak Bias Current:

200 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

210 °C (410 °F)

Physical Characteristics

Total Terminals:

8

Terminal Position:

Upper

Terminal Form:

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Standards

JESD-30 Code:

R-XUUC-N8

Packaging and Shipping

Package Code:

DIE

Package Shape:

Package Style:

Uncased Chip

Trade Compliance

OPA2333SKGD2 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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