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MSP432P4111TPZ

Texas Instruments

MSP432P4111TPZ by Texas Instruments

MSP432P4111TPZ by Texas Instruments is a 32-bit microcontroller with Cortex-M4F CPU, 256 RAM words, and 26-Ch 16-Bit ADC channels. Ideal for industrial applications due to its low power mode, peripherals like LCD and RTC, and connectivity options including I2C, SPI, UART.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,718 parts In-Stock

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Digiode

USA . 4,331 parts In-Stock

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4,331

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Distributors (Availability)

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AZTECH Wire

Italy . 657 parts In-Stock

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$10.900

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657

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One Stop Electronics

USA . 1,557 parts In-Stock

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$26.000

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$26.000

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Parana Technologies

USA . 1,422 parts In-Stock

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$47.067

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$4,370.863

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$42.360

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1,422

$47.067

$4,370.863

$42.360

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DigiPath Technology Company

USA . 1,051 parts In-Stock

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$51.826

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$47.680

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1,051

$51.826

$47.680

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ChromeModa Solutions

Germany . 4,285 parts In-Stock

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$52.884

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$43.365

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4,285

$52.884

$43.365

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IDEA Electronic Components Group

UK . 655 parts In-Stock

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$52.884

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$50.240

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$47.596

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655

$52.884

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$47.596

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Corphita

USA . 844 parts In-Stock

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Infinite Electronics LLP (Excess)

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Microchip USA

USA . 221 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the Texas Instruments MSP432P4111TPZ microcontroller. Designed with precision and excellence in mind, this device offers unparalleled performance and reliability for a wide range of applications. From industrial automation to consumer electronics, this microcontroller excels in every task it's given. With advanced features like integrated cache, low power mode, and a wide range of peripherals, the MSP432P4111TPZ delivers exceptional value and benefits to customers looking for top-of-the-line solutions. Trust in Texas Instruments to provide you with the quality and innovation you need to succeed in today's competitive market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used in microcontroller packages due to its durability and resistance to damage, making the product reliable for long-term use.

Integrated Cache: YES

Having an integrated cache helps in improving the performance of the microcontroller by reducing access time to frequently used data, resulting in faster processing speeds.

Maximum Supply Voltage: 3.7 V

The higher maximum supply voltage allows for more flexibility in the power supply options for the product, making it suitable for a wider range of applications.

RAM Bytes: 262144

With a large RAM size, the microcontroller can handle complex tasks and store more data simultaneously, making it suitable for demanding applications that require considerable memory.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the microcontroller energy-efficient and reliable in various operating conditions.

No. of Serial I/Os: 2

Having multiple serial I/Os allows for easy communication with other devices, expanding the connectivity options of the product and making it more versatile.

Technical Specifications

Microcontrollers MSP432P4111TPZ attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Boundary Scan:

YES

CPU Family:

CORTEX-M4F

Maximum Clock Frequency:

24 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

Format:

FLOATING POINT

Integrated Cache:

YES

JESD-30 Code:

S-PQFP-G100

JESD-609 Code:

e4

Length:

14 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

8

No. of External Interrupts:

0

No. of I/O Lines:

84

No. of Serial I/Os:

2

No. of Terminals:

100

No. of Timers:

6

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

RAM Bytes:

262144

RAM Words:

256

ROM Words:

2097152

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

24 rpm

Maximum Supply Voltage:

3.7 V

Minimum Supply Voltage:

1.62 V

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Peripheral IC Type:

Data EEPROM Size:

0

Connectivity:

I2C(4), IRDA(4), SPI(8), UART(4)

Peripherals:

COMPARATOR(16), DMA(8), LCD, POR, RTC, TIMER(7), WDT

Analog To Digital Convertors:

26-Ch 16-Bit

Trade Compliance

MSP432P4111TPZ Peripheral ICs trade compliance attributes, and parameters.

ECCN

5A992.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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