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MSP430G2313IPW28R

Texas Instruments

MSP430G2313IPW28R by Texas Instruments

MSP430G2313IPW28R by Texas Instruments is a 16-bit microcontroller with 4096 ROM words and 256 RAM bytes. It operates at a max clock frequency of 16 MHz, suitable for industrial applications requiring low power consumption and connectivity via I2C, SPI, UART.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,020 parts In-Stock

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Digiode

USA . 2,668 parts In-Stock

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2,668

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Distributors (Availability)

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AZTECH Wire

Italy . 739 parts In-Stock

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$9.494

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739

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One Stop Electronics

USA . 1,383 parts In-Stock

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$18.000

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Parana Technologies

USA . 2,100 parts In-Stock

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$64.056

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$64.056

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DigiPath Technology Company

USA . 423 parts In-Stock

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$70.534

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$64.891

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423

$70.534

$64.891

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ChromeModa Solutions

Germany . 6,969 parts In-Stock

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$71.973

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$59.018

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6,969

$71.973

$59.018

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IDEA Electronic Components Group

UK . 2,187 parts In-Stock

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$71.973

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$68.374

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$64.776

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2,187

$71.973

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$64.776

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Microchip USA

USA . 5,694 parts In-Stock

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Corphita

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Overview

Unleash the power of innovation with the MSP430G2313IPW28R by Texas Instruments! As a leading manufacturer in the industry, Texas Instruments delivers top-quality microcontrollers for a wide range of applications. With features like low power mode, peripherals including BOD and DMA, and connectivity options such as I2C and UART, this product offers unmatched value and benefits to customers. Whether you're working on IoT devices, industrial automation, or consumer electronics, the MSP430G2313IPW28R provides the performance and reliability you need to bring your ideas to life. Elevate your projects with the trusted technology of Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material allows for a lightweight and durable package, making the product suitable for various applications.

Maximum Supply Voltage: 3.6 V

The high maximum supply voltage allows for flexibility in power supply options, catering to different power requirements.

CPU Family: MSP430

The MSP430 family is known for its low power consumption and high performance, making it a reliable choice for energy-efficient applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, ensuring efficient operation and reliable performance.

Connectivity: "I2C, IRDA, LIN, SPI, UART, USCI(2)

The multiple connectivity options enhance the product's versatility, allowing for seamless integration with other devices and systems.

Peripheral IC Type: MICROCONTROLLER, RISC

Being a RISC microcontroller, this product offers efficient and high-performance computing capabilities, suitable for a wide range of applications.

Maximum Clock Frequency: 16 MHz

The high maximum clock frequency enables fast processing speeds, making the product suitable for applications requiring quick response times.

On Chip Program ROM Width: 8

Having a wide on-chip program ROM width allows for storing a larger amount of program code, enabling more complex functionalities and features.

Technical Specifications

Microcontrollers MSP430G2313IPW28R attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

NO

Additional Features:

ALSO OPERATES AT 1.8V AT 6 MHZ

Address Bus Width:

0

Bit Size:

16

Boundary Scan:

YES

CPU Family:

MSP430

Maximum Clock Frequency:

16 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

Format:

FIXED POINT

Integrated Cache:

NO

JESD-30 Code:

R-PDSO-G28

JESD-609 Code:

e4

Length:

9.7 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

1

No. of DMA Channels:

1

No. of I/O Lines:

24

No. of Serial I/Os:

1

No. of Terminals:

28

No. of Timers:

2

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP28,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/3.3

Qualification:

Not Qualified

RAM Bytes:

256

RAM Words:

0.25

ROM Words:

4096

ROM Programmability:

FLASH

Maximum Seated Height:

1.2 mm

Speed:

16 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

.42 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4.4 mm

Peripheral IC Type:

Data EEPROM Size:

0

Connectivity:

"I2C, IRDA, LIN, SPI, UART, USCI(2)"

Peripherals:

"BOD, COMPARATOR(8), DMA(1), TIMER(2), WDT"

Trade Compliance

MSP430G2313IPW28R Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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