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MSP430G2231IRSARQ1

Texas Instruments

MSP430G2231IRSARQ1 by Texas Instruments

MSP430G2231IRSARQ1 by Texas Instruments is a 16-bit microcontroller with 2048 ROM words and 128 RAM bytes. It features 8-Ch 10-Bit ADC channels, BOR, DMA, TIMER, WDT peripherals for industrial applications. Operating at -40 to 85 °C, it supports I2C and SPI connectivity with a max supply voltage of 3.6 V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,158 parts In-Stock

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5,158

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Digiode

USA . 2,893 parts In-Stock

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2,893

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Distributors (Availability)

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Parana Technologies

USA . 1,159 parts In-Stock

1+ parts

$13.983

100+ parts

-

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$14.454

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1,159

$13.983

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$14.454

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DigiPath Technology Company

USA . 1,046 parts In-Stock

1+ parts

$15.397

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1,046

$15.397

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ChromeModa Solutions

Germany . 1,654 parts In-Stock

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$15.711

100+ parts

$12.883

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1,654

$15.711

$12.883

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IDEA Electronic Components Group

UK . 530 parts In-Stock

1+ parts

$15.711

100+ parts

$14.925

1k+ parts

$14.140

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530

$15.711

$14.925

$14.140

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AZTECH Wire

Italy . 594 parts In-Stock

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$17.665

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594

$17.665

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One Stop Electronics

USA . 347 parts In-Stock

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$33.000

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347

$33.000

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Component Stockers USA

USA . 480 parts In-Stock

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$99.990

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480

$99.990

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Microchip USA

USA . 1,023 parts In-Stock

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1,023

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Corphita

USA . 529 parts In-Stock

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529

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Overview

Elevate your projects with the Texas Instruments MSP430G2231IRSARQ1 microcontroller, designed to deliver top-notch performance and reliability. As a leading manufacturer in the industry, Texas Instruments guarantees quality and innovation in every product. With applications ranging from automotive to industrial control systems, this microcontroller offers unparalleled value for customers seeking efficient solutions. Unlock the benefits of its advanced features like ADC channels, DMA support, and low power consumption, while experiencing seamless connectivity with I2C and SPI interfaces. Trust in Texas Instruments to provide cutting-edge technology that empowers your designs to reach new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy material provides durability and reliability for the microcontroller.

Maximum Supply Voltage: 3.6 V

Allows for a higher supply voltage which can be beneficial for certain applications requiring higher power.

Bit Size: 16

Having a 16-bit size allows for handling larger data sets and more complex calculations.

ADC Channels: YES

Having Analog to Digital Convertor channels enables the microcontroller to interface with analog sensors or signals.

DMA Channels: YES

Direct Memory Access channels can improve data transfer efficiency and performance of the microcontroller.

RAM Bytes: 128

Having 128 bytes of RAM allows for storing and manipulating data during program execution.

Connectivity: I2C, SPI

Support for I2C and SPI allows for easy communication with other devices and peripherals.

ROM Programmability: FLASH

Flash ROM programmability enables easy and quick reprogramming of the microcontroller's firmware.

Technical Specifications

Microcontrollers MSP430G2231IRSARQ1 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Additional Features:

IT ALSO HAS PROGRAMMABILITY OF FRAM

Address Bus Width:

0

Bit Size:

16

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

JESD-30 Code:

S-PQCC-N16

JESD-609 Code:

e4

Length:

4 mm

Moisture Sensitivity Level (MSL):

2

No. of I/O Lines:

10

No. of Terminals:

16

On Chip Program ROM Width:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

RAM Bytes:

128

ROM Words:

2048

ROM Programmability:

FLASH

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Speed:

16 rpm

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

1.8 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4 mm

Peripheral IC Type:

Data EEPROM Size:

0

Connectivity:

I2C, SPI

Peripherals:

BOR, DMA, TIMER, WDT

Analog To Digital Convertors:

8-Ch 10-Bit

Trade Compliance

MSP430G2231IRSARQ1 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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