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MSP430FR5922IRGCR

Texas Instruments

MSP430FR5922IRGCR by Texas Instruments

MSP430FR5922IRGCR by Texas Instruments is a 16-bit microcontroller with 8KB FRAM ROM, 2048B RAM, and 8-Ch 12-Bit ADC. Ideal for industrial applications due to its low power mode, wide temperature range (-40 to 85 °C), and multiple peripherals including BOR, DMA(3), RTC, TIMER(5), WDT.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,055 parts In-Stock

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Digiode

USA . 4,906 parts In-Stock

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4,906

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One Stop Electronics

USA . 981 parts In-Stock

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$10.000

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981

$10.000

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Microchip USA

USA . 3,216 parts In-Stock

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$18.746

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AZTECH Wire

Italy . 895 parts In-Stock

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$19.415

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$19.415

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Parana Technologies

USA . 2,215 parts In-Stock

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$71.204

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DigiPath Technology Company

USA . 1,598 parts In-Stock

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$78.404

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ChromeModa Solutions

Germany . 1,058 parts In-Stock

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$80.004

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$65.603

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$80.004

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IDEA Electronic Components Group

UK . 349 parts In-Stock

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$80.004

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$76.004

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$72.004

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Corphita

USA . 3,298 parts In-Stock

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Overview

Unlock the potential of your projects with the Texas Instruments MSP430FR5922IRGCR microcontroller. Crafted with precision and expertise, this powerful device offers unmatched quality and reliability for a wide range of applications. From industrial automation to consumer electronics, the MSP430FR5922IRGCR delivers exceptional performance, efficiency, and versatility. Stay ahead of the curve with advanced features like FRAM technology, low power modes, and multiple peripherals. Elevate your designs with the value and innovation that Texas Instruments brings to every product, making the MSP430FR5922IRGCR the ideal choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the microcontroller, ideal for various application environments.

Maximum Supply Voltage: 3.6 V

Allows for flexibility in power supply options and compatibility with a wide range of systems.

ROM Words: 65536

Generous ROM capacity for storing program instructions and data, enabling complex applications to be run smoothly.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture ensures efficient processing of instructions, making the microcontroller suitable for high-performance applications.

Analog To Digital Convertors: 8-Ch 12-Bit

Multiple ADC channels with 12-bit resolution allow for precise analog signal acquisition and processing.

PWM Channels: YES

PWM capability enables the generation of accurate pulse-width modulated signals, essential for controlling various devices and systems.

Low Power Mode: YES

Ability to operate in low power mode helps conserve energy and prolong battery life in battery-powered applications.

Technical Specifications

Microcontrollers MSP430FR5922IRGCR attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

16

Boundary Scan:

YES

CPU Family:

MSP430

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

Format:

FIXED POINT

Integrated Cache:

NO

JESD-30 Code:

S-PQCC-N64

JESD-609 Code:

e4

Length:

9 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

3

No. of External Interrupts:

0

No. of I/O Lines:

51

No. of Serial I/Os:

4

No. of Terminals:

64

No. of Timers:

5

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

RAM Bytes:

2048

RAM Words:

2

ROM Words:

65536

ROM Programmability:

FRAM

Maximum Seated Height:

1 mm

Speed:

16 rpm

Maximum Supply Current:

1.62 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

1.8 V

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

9 mm

Peripheral IC Type:

Connectivity:

EUSCI(4)

Peripherals:

BOR, DMA(3), RTC, TIMER(5), WDT

Analog To Digital Convertors:

8-Ch 12-Bit

Trade Compliance

MSP430FR5922IRGCR Peripheral ICs trade compliance attributes, and parameters.

ECCN

5A992.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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