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MSP430F5309IZQE

Texas Instruments

MSP430F5309IZQE by Texas Instruments

MSP430F5309IZQE by Texas Instruments is a 16-bit microcontroller with 80 terminals, operating at up to 32 MHz. It features 8 ADC channels, 3 DMA channels, and offers low power mode. Ideal for industrial applications requiring high-speed processing and multiple I/O lines.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,619 parts In-Stock

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Digiode

USA . 1,064 parts In-Stock

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1,064

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Distributors (Availability)

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One Stop Electronics

USA . 228 parts In-Stock

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$11.000

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228

$11.000

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AZTECH Wire

Italy . 630 parts In-Stock

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$19.307

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630

$19.307

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Parana Technologies

USA . 594 parts In-Stock

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$38.104

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594

$38.104

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DigiPath Technology Company

USA . 17 parts In-Stock

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$41.957

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$38.600

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17

$41.957

$38.600

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ChromeModa Solutions

Germany . 5,477 parts In-Stock

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$42.813

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$35.107

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5,477

$42.813

$35.107

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IDEA Electronic Components Group

UK . 1,657 parts In-Stock

1+ parts

$42.813

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$40.672

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$38.532

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1,657

$42.813

$40.672

$38.532

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Corphita

USA . 3,480 parts In-Stock

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Microchip USA

USA . 399 parts In-Stock

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Overview

Unlock the power of innovation with the MSP430F5309IZQE microcontroller by Texas Instruments. Designed with precision and expertise, this high-quality product offers unparalleled performance in a compact package. Ideal for a wide range of applications, this microcontroller provides customers with the value, benefits, and advantages they need to stay ahead of the competition. Experience seamless connectivity, low power consumption, and exceptional reliability with the MSP430F5309IZQE - your key to unlocking limitless possibilities in the world of technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and helps in reducing overall product weight.

Maximum Supply Voltage: 3.6 V

Higher supply voltage allows for greater flexibility in power supply options.

Bit Size: 16

16-bit architecture allows for higher computational capability and more complex operations.

No. of Terminals: 80

More terminals provide additional connectivity options and interfaces for peripherals.

Maximum Clock Frequency: 32 MHz

Higher clock frequency enables faster processing speeds and performance.

ADC Channels: YES

Analog to Digital Converters allow for precise measurements and data acquisition from sensors.

DMA Channels: YES

Direct Memory Access channels reduce CPU workload and enhance data transfer speeds.

ROM Words: 24576

High ROM capacity enables storage of extensive program code and data.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture offers efficient instruction execution and improved performance.

Technology: BIPOLAR

Bipolar technology ensures reliable operation and robust performance in industrial environments.

Technical Specifications

Microcontrollers MSP430F5309IZQE attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Additional Features:

ALSO OPERATES AT 1.8 V MINIMUM SUPPLY AT 8 MHZ

Address Bus Width:

0

Bit Size:

16

Boundary Scan:

YES

CPU Family:

MSP430

Maximum Clock Frequency:

32 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

Format:

FIXED POINT

Integrated Cache:

NO

JESD-30 Code:

S-PBGA-B80

JESD-609 Code:

e1

Length:

5 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

3

No. of External Interrupts:

0

No. of I/O Lines:

47

No. of Serial I/Os:

4

No. of Terminals:

80

No. of Timers:

18

On Chip Data RAM Width:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA80,9X9,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/3.3

Qualification:

Not Qualified

RAM Bytes:

6144

RAM Words:

6

ROM Words:

24576

ROM Programmability:

FLASH

Maximum Seated Height:

1 mm

Speed:

25 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

6.5 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

2.4 V

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5 mm

Peripheral IC Type:

Data EEPROM Size:

0

Connectivity:

"I2C, IRDA, SCI, SPI(2), UART(2)"

Peripherals:

"BOD, COMPARATOR(16), CRC, DMA(3), RTC, TIMER(18), WDT"

Analog To Digital Convertors:

8-Ch 10-Bit

Trade Compliance

MSP430F5309IZQE Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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