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LT1014AMJB

Texas Instruments

LT1014AMJB by Texas Instruments

LT1014AMJB by Texas Instruments is a quad operational amplifier with 117 dB CMRR and 400000 min voltage gain. It operates at -55 to 125 °C, with micropower feature and 700 kHz unity gain bandwidth. Ideal for military applications requiring low-offset and high precision in a compact package.

Median Price

$80.997

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 22,037 parts In-Stock

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$80.997

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$71.997

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$52.939

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$52.939

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Distributors (In-Stock)

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Digiode

USA . 1,938 parts In-Stock

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$76.947

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1,938

$76.947

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American Microsemiconductor Inc.

USA . 14 parts In-Stock

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$109.000

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14

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Vyrian

USA . 9,267 parts In-Stock

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Legend Electronics Inc.

USA . 6 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2 parts In-Stock

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Electronics Depot

USA . 1 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 389 parts In-Stock

1+ parts

$5.807

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$6.596

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389

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IDEA Electronic Components Group

UK . 2,118 parts In-Stock

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$6.525

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$5.872

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ChromeModa Solutions

Germany . 2,095 parts In-Stock

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$6.525

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$5.350

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$6.525

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AZTECH Wire

Italy . 1,219 parts In-Stock

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$10.100

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Corphita

USA . 91 parts In-Stock

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$72.897

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Microchip USA

USA . 4,026 parts In-Stock

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DigiPath Technology Company

USA . 684 parts In-Stock

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$5.883

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Kepictronics

USA . 167 parts In-Stock

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A-Plus Industry Inc.

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Overview

Elevate your projects with the LT1014AMJB by Texas Instruments, a high-quality operational amplifier designed to deliver precision and reliability. Manufactured by the industry leader, this op amp offers unparalleled performance in a variety of applications. With its low-offset and micropower features, this product ensures optimal functionality while maintaining efficiency. Trust Texas Instruments to provide you with cutting-edge technology that exceeds expectations. Experience the value and benefits of the LT1014AMJB for your next project today.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This package material ensures durability and reliability in various operating conditions.

Maximum Input Offset Voltage: 350 uV

Low input offset voltage ensures accurate signal processing and minimal error in the output.

Nominal Common Mode Reject Ratio: 117 dB

High common mode rejection ratio signifies better rejection of unwanted signals or noise, resulting in cleaner output signals.

Nominal Supply Voltage / Vsup (V): 15

Suitable supply voltage ensures stable operation and optimum performance of the op amp.

Maximum Operating Temperature: 125 °C

Wide temperature range allows for reliable operation in various environmental conditions.

Nominal Unity Gain Bandwidth: 700 kHz

Higher unity gain bandwidth indicates faster response and better performance in amplifying signals.

Technology: BIPOLAR

Bipolar technology offers good performance characteristics such as low noise and high gain, making it suitable for precision applications.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed as an operational amplifier, ensuring its suitability for various signal processing applications.

Technical Specifications

Operational Amplifiers (Op Amps) LT1014AMJB attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

5/±15 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

Yes

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

700 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

117 dB

Minimum Common Mode Rejection Ratio (CMRR ):

97 dB

Input Offset Voltage Limit:

350 uV

Minimum Voltage Gain:

400000

Minimum Slew Rate:

0.2 V/us

Nominal Slew Rate:

0.4 V/us

Maximum Input Offset Current (IIO):

1.3 nA

Peak Bias Current:

-30 nA

Maximum Bias Current (IIB) @25 °C:

30 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

22 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-22 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

2.2 mA

Physical Characteristics

Length:

0.769 in (19.545 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

14

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin/Lead

Package Body Material:

Ceramic, Metal-Sealed Cofired

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

38535Q/M;38534H;883B

Standards

JESD-30 Code:

R-CDIP-T14

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tube

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP14,.3

Trade Compliance

LT1014AMJB Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

NSN

5962-01-356-5902, 5962013565902

NIIN

013565902

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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