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LT1013MJGB

Texas Instruments

LT1013MJGB by Texas Instruments

LT1013MJGB by Texas Instruments is a dual operational amplifier with 550uV max input offset voltage and 114dB nominal CMRR. Ideal for military applications, it operates at -55 to 125°C, has a unity gain bandwidth of 1MHz, and consumes micropower at 1.1mA max supply current.

Median Price

$28.844

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,247 parts In-Stock

1+ parts

$25.670

100+ parts

$25.160

1k+ parts

$24.640

10k+ parts

-

1,247

$25.670

$25.160

$24.640

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Texas Instruments

USA . 195,551 parts In-Stock

1+ parts

$32.017

100+ parts

$28.459

1k+ parts

$20.926

10k+ parts

-

195,551

$32.017

$28.459

$20.926

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,944 parts In-Stock

1+ parts

$30.416

100+ parts

-

1k+ parts

-

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4,944

$30.416

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-

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Vyrian

USA . 7,279 parts In-Stock

1+ parts

-

100+ parts

-

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-

10k+ parts

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7,279

-

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,424 parts In-Stock

1+ parts

$4.780

100+ parts

-

1k+ parts

$5.285

10k+ parts

-

1,424

$4.780

-

$5.285

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DigiPath Technology Company

USA . 43 parts In-Stock

1+ parts

$5.264

100+ parts

-

1k+ parts

-

10k+ parts

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43

$5.264

-

-

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ChromeModa Solutions

Germany . 6,556 parts In-Stock

1+ parts

$5.371

100+ parts

$4.404

1k+ parts

-

10k+ parts

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6,556

$5.371

$4.404

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IDEA Electronic Components Group

UK . 1,692 parts In-Stock

1+ parts

$5.371

100+ parts

-

1k+ parts

$4.834

10k+ parts

-

1,692

$5.371

-

$4.834

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AZTECH Wire

Italy . 209 parts In-Stock

1+ parts

$10.890

100+ parts

-

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209

$10.890

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Corphita

USA . 3,872 parts In-Stock

1+ parts

$28.815

100+ parts

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3,872

$28.815

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Perfect Parts

USA . 2,565 parts In-Stock

1+ parts

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2,565

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Microchip USA

USA . 1,906 parts In-Stock

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1,906

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Overview

Discover the LT1013MJGB by Texas Instruments, a high-quality operational amplifier that offers unmatched performance and reliability. With Texas Instruments' renowned expertise in semiconductor manufacturing, this component is perfect for a wide range of applications in electronics. Whether you're designing audio equipment, control systems, or sensor interfaces, this op amp delivers exceptional precision and efficiency. Trust in Texas Instruments to provide cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the LT1013MJGB and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This material provides durability and protection, ensuring the operational amplifier is reliable in various environments.

Maximum Input Offset Voltage: 550 uV

This low offset voltage ensures accurate signal processing and minimal error in the output signals.

Nominal Common Mode Reject Ratio: 114 dB

High common mode rejection ratio helps in rejecting unwanted noise and interference, resulting in cleaner output signals.

Nominal Unity Gain Bandwidth: 1000 kHz

The high unity gain bandwidth indicates the operational amplifier can handle high-frequency signals effectively.

Minimum Common Mode Reject Ratio: 97 dB

Even the minimum common mode rejection ratio is high, ensuring good noise rejection capabilities in real-world applications.

Technology: BIPOLAR

Bipolar technology offers good linearity and low noise, making this operational amplifier suitable for precision applications.

Technical Specifications

Operational Amplifiers (Op Amps) LT1013MJGB attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

5/±15 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

114 dB

Minimum Common Mode Rejection Ratio (CMRR ):

97 dB

Input Offset Voltage Limit:

550 uV

Minimum Voltage Gain:

250000

Minimum Slew Rate:

0.2 V/us

Nominal Slew Rate:

0.4 V/us

Maximum Input Offset Current (IIO):

2 nA

Peak Bias Current:

-45 nA

Maximum Bias Current (IIB) @25 °C:

30 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

22 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-22 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

1.1 mA

Physical Characteristics

Length:

0.377 in (9.58 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin/Lead

Package Body Material:

Ceramic, Glass-Sealed

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

38535Q/M;38534H;883B

Standards

JESD-30 Code:

R-GDIP-T8

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tube

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

LT1013MJGB Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

NSN

5962-01-369-8485, 5962013698485

NIIN

013698485

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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