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LT1013AMFKB

Texas Instruments

LT1013AMFKB by Texas Instruments

LT1013AMFKB by Texas Instruments is a dual operational amplifier with low-offset and micropower features. It offers a max input offset voltage of 300uV, bias current of -0.03uA, and common mode reject ratio of 117dB. Ideal for military-grade applications requiring high precision in a compact chip carrier package.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,833 parts In-Stock

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Digiode

USA . 3,138 parts In-Stock

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Inland Empire Components Inc.

USA . 22 parts In-Stock

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Resion

USA . 9 parts In-Stock

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One Stop Electronics

USA . 1,564 parts In-Stock

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$1.410

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Parana Technologies

USA . 1,423 parts In-Stock

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$2.740

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$3.224

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ChromeModa Solutions

Germany . 4,556 parts In-Stock

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$3.079

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$2.525

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IDEA Electronic Components Group

UK . 496 parts In-Stock

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$3.079

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$2.771

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AZTECH Wire

Italy . 560 parts In-Stock

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$19.515

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Corphita

USA . 2,692 parts In-Stock

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DigiPath Technology Company

USA . 1,103 parts In-Stock

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$2.776

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Microchip USA

USA . 1,064 parts In-Stock

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Kepictronics

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Overview

Elevate your electronic designs with the LT1013AMFKB by Texas Instruments, a high-quality operational amplifier that offers unparalleled performance and reliability. Designed with precision and expertise, this chip carrier package boasts micropower capabilities, low-offset voltage, and exceptional frequency compensation. Whether you're working on audio equipment, instrumentation, or control systems, this military-grade op amp provides the perfect solution for demanding applications. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations and unlocks endless possibilities for your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material ensures durability and reliability, making the product suitable for harsh operating conditions.

Nominal Common Mode Reject Ratio: 117 dB

High common mode rejection ratio ensures minimal noise interference, leading to accurate and stable operation.

Minimum Slew Rate: 0.2 V/us

Fast slew rate allows for rapid response to input signals, making the product ideal for applications requiring quick adjustments.

Low-Offset: YES

Low offset voltage ensures minimal error in signal amplification, resulting in accurate output.

Technology: BIPOLAR

Bipolar technology offers high precision and low noise operation, making the product suitable for sensitive applications.

Amplifier Type: OPERATIONAL AMPLIFIER

Operational amplifiers are versatile and widely used in various electronic circuits, making this product a popular choice among designers.

Technical Specifications

Operational Amplifiers (Op Amps) LT1013AMFKB attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

5/±15 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

Yes

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

117 dB

Minimum Common Mode Rejection Ratio (CMRR ):

100 dB

Input Offset Voltage Limit:

300 uV

Minimum Voltage Gain:

800000

Minimum Slew Rate:

0.2 V/us

Nominal Slew Rate:

0.4 V/us

Maximum Input Offset Current (IIO):

1.3 nA

Peak Bias Current:

-30 nA

Maximum Bias Current (IIB) @25 °C:

20 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

22 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-22 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

1.1 mA

Physical Characteristics

Length:

0.35 in (8.89 mm)

Width:

0.35 in (8.89 mm)

Maximum Seated Height:

0.08 in (2.03 mm)

Total Terminals:

20

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Quad

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Ceramic, Metal-Sealed Cofired

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

38535Q/M;38534H;883B

Standards

JESD-30 Code:

S-CQCC-N20

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tube

Package Code:

Package Shape:

Package Style:

Chip Carrier

Package Equivalence Code:

LCC20,.35SQ

Trade Compliance

LT1013AMFKB Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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