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LP339DRG4

Texas Instruments

LP339DRG4 by Texas Instruments

LP339DRG4 by Texas Instruments is a comparator with 4 functions, 9000 uV max input offset voltage, and 0.04 uA max average bias current. Widely used in applications requiring open-collector output type, it operates at -40 to 70 °C with a supply voltage of 5V.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,251 parts In-Stock

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Digiode

USA . 1,159 parts In-Stock

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Bristol Electronics

USA . 550 parts In-Stock

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550

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LWI Electronics Inc

India . 510 parts In-Stock

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.966

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$0.879

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$0.792

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$0.966

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Parana Technologies

USA . 300 parts In-Stock

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$3.356

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$3.881

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IDEA Electronic Components Group

UK . 1,752 parts In-Stock

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$3.771

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$3.394

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ChromeModa Solutions

Germany . 986 parts In-Stock

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$3.771

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$3.092

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AZTECH Wire

Italy . 432 parts In-Stock

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$7.078

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One Stop Electronics

USA . 1,150 parts In-Stock

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Perfect Parts

USA . 24,193 parts In-Stock

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Corphita

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Microchip USA

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DigiPath Technology Company

USA . 446 parts In-Stock

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$3.400

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Overview

Enhance your electronic designs with the LP339DRG4 by Texas Instruments, a high-quality comparator that delivers precision and reliability. With Texas Instruments' reputation for excellence in manufacturing, you can trust that this product will meet your expectations. Ideal for applications requiring fast response times and low power consumption, the LP339DRG4 offers exceptional value and performance. Upgrade your projects today with this versatile component that guarantees superior results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and durability, making the product suitable for a wide range of applications.

Maximum Input Offset Voltage: 9000 uV

High precision in detecting small voltage differences, ensuring accurate comparison results.

Maximum Average Bias Current (IIB): 0.04 uA

Low bias current ensures minimal interference with the signal being compared, leading to accurate results.

Surface Mount: YES

Easy to integrate into circuit boards, saving space and facilitating mass production.

No. of Functions: 4

Ability to compare up to 4 different signals simultaneously, increasing versatility and efficiency.

Nominal Supply Voltage / Vsup (V): 5

Stable supply voltage for consistent performance in various operating conditions.

Maximum Supply Voltage Limit: 36 V

Wide voltage range allows for compatibility with a variety of power sources.

Maximum Operating Temperature: 70 °C

Can be used in high-temperature environments without compromising performance.

Output Type: OPEN-COLLECTOR

Open-collector design allows for flexible interfacing with other circuitry.

Technology: BIPOLAR

Bipolar technology offers high speed and precision in signal comparison.

Technical Specifications

Comparators LP339DRG4 attributes and parameters. Explore more Comparators devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

BIPOLAR

Power Supply:

5 V

Total Functions:

4

Sub-Category:

Comparators

Output Type:

Open-Collector

Performance Specifications

Maximum Input Offset Voltage:

9 mV

Peak Bias Current:

40 nA

Maximum Bias Current (IIB) @25 °C:

25 nA

Operational Characteristics

Maximum Supply Current:

100 μA

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

36 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Nominal Response Time:

1.3 µs

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Type:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

LP339DRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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