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LP2902PWE4

Texas Instruments

LP2902PWE4 by Texas Instruments

LP2902PWE4 by Texas Instruments is a quad operational amplifier with 14 terminals. It features a max input offset voltage of 10000 uV, nominal common mode reject ratio of 90 dB, and min voltage gain of 30000. Ideal for industrial applications requiring micropower amplification in a compact package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 24,130 parts In-Stock

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24,130

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Vyrian

USA . 5,005 parts In-Stock

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5,005

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Digiode

USA . 212 parts In-Stock

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212

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 694 parts In-Stock

1+ parts

$4.260

100+ parts

-

1k+ parts

$4.691

10k+ parts

-

694

$4.260

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$4.691

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DigiPath Technology Company

USA . 411 parts In-Stock

1+ parts

$4.691

100+ parts

$4.316

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-

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411

$4.691

$4.316

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ChromeModa Solutions

Germany . 4,609 parts In-Stock

1+ parts

$4.787

100+ parts

$3.925

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4,609

$4.787

$3.925

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IDEA Electronic Components Group

UK . 627 parts In-Stock

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$4.787

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$4.308

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627

$4.787

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$4.308

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One Stop Electronics

USA . 1,251 parts In-Stock

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$8.410

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1,251

$8.410

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AZTECH Wire

Italy . 896 parts In-Stock

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$9.057

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$9.057

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Corphita

USA . 3,037 parts In-Stock

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3,037

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Overview

Enhance your electronic designs with the LP2902PWE4 operational amplifier by Texas Instruments. Known for their superior quality and reliability, Texas Instruments offers a wide range of innovative solutions in the operational amplifier category. The LP2902PWE4 boasts excellent performance characteristics ensuring precise signal processing in a variety of applications. With its micropower technology, low bias current, and high voltage gain, this amplifier delivers exceptional value and efficiency to customers looking for top-notch electronic components. Trust Texas Instruments to elevate your designs to the next level with the LP2902PWE4 operational amplifier.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 10000 uV

Allows for accurate and precise signal processing with minimal input voltage errors.

Maximum Average Bias Current (IIB): 0.04 uA

Ensures low power consumption and reduced bias current for efficient operation.

Surface Mount: YES

Enables easy and convenient integration onto circuit boards for compact designs.

Nominal Common Mode Reject Ratio: 90 dB

Provides high immunity to common mode noise for reliable signal processing.

Nominal Supply Voltage / Vsup (V): 5

Operates effectively with a standard supply voltage for compatibility with various systems.

Technology: BIPOLAR

Utilizes bipolar technology for high performance and stability in signal amplification.

Technical Specifications

Operational Amplifiers (Op Amps) LP2902PWE4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±1.5/±16/3/32 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

100 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Input Offset Voltage Limit:

10000 uV

Minimum Voltage Gain:

30000

Nominal Slew Rate:

0.05 V/us

Peak Bias Current:

40 nA

Maximum Bias Current (IIB) @25 °C:

20 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

32 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

275 μA

Physical Characteristics

Length:

0.197 in (5 mm)

Width:

0.173 in (4.4 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

14

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP14,.25

Trade Compliance

LP2902PWE4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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