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LP211JG

Texas Instruments

LP211JG by Texas Instruments

LP211JG by Texas Instruments is a ceramic, glass-sealed comparator with 10000 uV max input offset voltage and 0.15 uA max average bias current. Ideal for applications requiring open-collector output type, it operates b/w -25 to 85 °C with +-15 V power supplies.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,826 parts In-Stock

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3,826

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Digiode

USA . 1,810 parts In-Stock

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1,810

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 996 parts In-Stock

1+ parts

$3.410

100+ parts

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996

$3.410

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Parana Technologies

USA . 1,242 parts In-Stock

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$5.620

100+ parts

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$6.418

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1,242

$5.620

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$6.418

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DigiPath Technology Company

USA . 919 parts In-Stock

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$6.189

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919

$6.189

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ChromeModa Solutions

Germany . 4,035 parts In-Stock

1+ parts

$6.315

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$5.178

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4,035

$6.315

$5.178

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IDEA Electronic Components Group

UK . 1,782 parts In-Stock

1+ parts

$6.315

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$5.684

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1,782

$6.315

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$5.684

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AZTECH Wire

Italy . 363 parts In-Stock

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$10.177

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363

$10.177

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Corphita

USA . 1,058 parts In-Stock

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Overview

Unlock the power of precision with the LP211JG by Texas Instruments, a top-of-the-line comparator designed for unmatched reliability and performance. As a leader in semiconductor technology, Texas Instruments delivers a product that exceeds expectations in a variety of applications. Experience seamless operation and superior accuracy with the LP211JG, perfect for industries requiring high-quality signal processing. Elevate your projects with this cutting-edge solution that offers unparalleled value and efficiency for all your electronic needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Ceramic and glass-sealed package provides excellent protection against environmental factors, ensuring durability and reliability.

Maximum Input Offset Voltage: 10000 uV

High maximum input offset voltage allows for accurate signal processing and detection, making it suitable for precision applications.

Nominal Supply Voltage / Vsup (V): 15

Nominal supply voltage of 15V provides sufficient power for the comparator to operate effectively within its specified parameters.

Output Type: OPEN-COLLECTOR/OPEN-EMITTER

Open-collector/open-emitter output type allows for flexible interfacing with other components and devices, enhancing compatibility and versatility.

Technology: BIPOLAR

Bipolar technology ensures high-speed and precise operation, making this comparator ideal for applications requiring accurate signal comparison.

Technical Specifications

Comparators LP211JG attributes and parameters. Explore more Comparators devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

BIPOLAR

Power Supply:

±15 V

Total Functions:

1

Sub-Category:

Comparators

Output Type:

Open-Collector, Open-Emitter

Performance Specifications

Maximum Input Offset Voltage:

10 mV

Peak Bias Current:

150 nA

Maximum Bias Current (IIB) @25 °C:

100 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-25 °C (-13 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Nominal Response Time:

1.2 µs

Physical Characteristics

Length:

0.378 in (9.6 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Ceramic, Glass-Sealed

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-GDIP-T8

Packaging and Shipping

Package Code:

DIP

Package Shape:

Package Type:

In-Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

LP211JG Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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