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LMX2541SQX2380E

Texas Instruments

LMX2541SQX2380E by Texas Instruments

LMX2541SQX2380E by Texas Instruments is a PLL frequency synthesizer with 36 terminals, operating at 3.3V. It features a square package shape, industrial temperature grade, and BICMOS technology. Ideal for applications requiring precise frequency synthesis in compact designs with surface mount capabilities.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,471 parts In-Stock

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Digiode

USA . 4,845 parts In-Stock

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Anansix

USA . 2,642 parts In-Stock

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2,642

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Distributors (Availability)

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One Stop Electronics

USA . 659 parts In-Stock

1+ parts

$7.500

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-

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659

$7.500

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AZTECH Wire

Italy . 555 parts In-Stock

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$11.288

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555

$11.288

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Parana Technologies

USA . 1,706 parts In-Stock

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$14.182

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$14.639

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1,706

$14.182

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$14.639

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DigiPath Technology Company

USA . 1,492 parts In-Stock

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$15.616

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$14.367

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1,492

$15.616

$14.367

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ChromeModa Solutions

Germany . 1,466 parts In-Stock

1+ parts

$15.935

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$13.067

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1,466

$15.935

$13.067

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IDEA Electronic Components Group

UK . 1,044 parts In-Stock

1+ parts

$15.935

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$15.138

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$14.342

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1,044

$15.935

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$14.342

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Corphita

USA . 4,368 parts In-Stock

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Overview

Unlock unparalleled performance and precision with the LMX2541SQX2380E by Texas Instruments. This state-of-the-art Phase Locked Loop (PLL) & Frequency Synthesis Circuit offers cutting-edge technology in a compact square package, perfect for a wide range of industrial applications. With a nominal supply voltage of 3.3V and a temperature grade of industrial, this chip carrier boasts top-notch quality and reliability. Trust Texas Instruments to deliver superior products that provide exceptional value, benefits, and advantages to customers looking for the best in frequency synthesis circuits. Elevate your projects to new heights with the LMX2541SQX2380E.

Feature Benefit Bullets

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving time and effort during manufacturing.

Nominal Supply Voltage (Vsup): 3.3 V

Compatible with standard voltage levels, making it easy to integrate into existing circuit designs without the need for additional components for voltage regulation.

Maximum Operating Temperature: 85 °C

Capable of operating at high temperatures, ensuring reliability in various environmental conditions and applications.

Technology: BICMOS

Utilizing Bipolar CMOS technology offers a good balance between speed, power consumption, and noise performance, making it suitable for applications requiring high performance.

Technical Specifications

Phase Locked Loops (PLL) & Frequency Synthesis Circuits LMX2541SQX2380E attributes and parameters. Explore more Phase Locked Loops (PLL) & Frequency Synthesis Circuits devices from Texas Instruments

Specs

Other IC type:

JESD-30 Code:

S-XQCC-N36

Length:

6 mm

No. of Functions:

1

No. of Terminals:

36

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Maximum Supply Voltage (Vsup):

3.45 V

Minimum Supply Voltage (Vsup):

3.15 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

6 mm

Trade Compliance

LMX2541SQX2380E Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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