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LMV824IDGVRE4

Texas Instruments

LMV824IDGVRE4 by Texas Instruments

LMV824IDGVRE4 by Texas Instruments is a micropower operational amplifier with 4 functions, featuring a max input offset voltage of 5500 uV and nominal common mode reject ratio of 85 dB. Ideal for automotive applications, this op amp operates at temperatures ranging from -40 to 125 °C and has a unity gain bandwidth of 5000 kHz.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,965 parts In-Stock

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3,965

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Vyrian

USA . 3,118 parts In-Stock

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3,118

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,430 parts In-Stock

1+ parts

$5.332

100+ parts

-

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$5.986

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1,430

$5.332

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$5.986

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DigiPath Technology Company

USA . 1,935 parts In-Stock

1+ parts

$5.871

100+ parts

$5.401

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1,935

$5.871

$5.401

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IDEA Electronic Components Group

UK . 1,119 parts In-Stock

1+ parts

$5.991

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$5.392

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1,119

$5.991

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$5.392

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ChromeModa Solutions

Germany . 1,043 parts In-Stock

1+ parts

$5.991

100+ parts

$4.913

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1,043

$5.991

$4.913

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One Stop Electronics

USA . 362 parts In-Stock

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$6.410

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362

$6.410

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AZTECH Wire

Italy . 748 parts In-Stock

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$16.212

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748

$16.212

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Microchip USA

USA . 5,126 parts In-Stock

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Corphita

USA . 228 parts In-Stock

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Overview

Elevate your electronic designs with the LMV824IDGVRE4 by Texas Instruments, a high-quality operational amplifier that offers unmatched performance and reliability. Manufactured by industry leader Texas Instruments, this op amp is perfect for a wide range of applications, from consumer electronics to automotive systems. Experience the superior value and benefits this product brings, with its micropower technology, low bias current, and wide operating temperature range. Trust in Texas Instruments for cutting-edge technology that delivers exceptional results in every project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 5500 uV

Ensures minimal error in the output signal, making it suitable for precision applications.

Nominal Supply Voltage / Vsup (V): 2.7

Operates efficiently at a low supply voltage, making it ideal for battery-powered devices.

Nominal Common Mode Reject Ratio: 85 dB

Provides high rejection of unwanted common-mode signals, resulting in accurate amplification of differential signals.

Nominal Unity Gain Bandwidth: 5000 kHz

Enables high-frequency operation, making it suitable for applications requiring fast signal processing.

Technology: BIPOLAR

Offers high stability and precision, making it a reliable choice for various signal processing tasks.

Technical Specifications

Operational Amplifiers (Op Amps) LMV824IDGVRE4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

2.5/5 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

5500 uV

Minimum Voltage Gain:

10000

Nominal Slew Rate:

1.7 V/us

Peak Bias Current:

140 nA

Maximum Bias Current (IIB) @25 °C:

100 nA

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

5.5 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

1.5 mA

Physical Characteristics

Length:

0.173 in (4.4 mm)

Width:

0.142 in (3.6 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

14

Terminal Pitch:

0.016 in (0.4 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP14,.25,16

Trade Compliance

LMV824IDGVRE4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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