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LMV822QDGKRQ1

Texas Instruments

LMV822QDGKRQ1 by Texas Instruments

Texas Instruments' LMV822QDGKRQ1 is a dual operational amplifier with 6000uV max input offset voltage and 85dB nominal CMRR. Ideal for automotive applications, it operates b/w -40 to 125 °C with micropower consumption of 0.9mA at 3/5V supplies.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,921 parts In-Stock

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Digiode

USA . 4,353 parts In-Stock

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4,353

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Distributors (Availability)

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Parana Technologies

USA . 1,561 parts In-Stock

1+ parts

$2.010

100+ parts

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$2.534

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1,561

$2.010

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$2.534

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DigiPath Technology Company

USA . 473 parts In-Stock

1+ parts

$2.213

100+ parts

$2.036

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473

$2.213

$2.036

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IDEA Electronic Components Group

UK . 449 parts In-Stock

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$2.258

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$2.032

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449

$2.258

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$2.032

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ChromeModa Solutions

Germany . 292 parts In-Stock

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$2.258

100+ parts

$1.852

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292

$2.258

$1.852

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One Stop Electronics

USA . 1,325 parts In-Stock

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$6.410

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1,325

$6.410

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AZTECH Wire

Italy . 471 parts In-Stock

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$11.204

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471

$11.204

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A-Z Elektronik GmbH

Germany . 5,267 parts In-Stock

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Corphita

USA . 4,559 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,511 parts In-Stock

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Kepictronics

USA . 2,500 parts In-Stock

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Microchip USA

USA . 186 parts In-Stock

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Overview

Discover the LMV822QDGKRQ1 by Texas Instruments, a high-quality operational amplifier designed for automotive applications. With its advanced technology and micropower capabilities, this amplifier offers reliable performance and precision in a compact form factor. Ideal for voltage-feedback applications, this product provides exceptional value and benefits to customers seeking a trustworthy solution for their automotive electronics needs. Trust in Texas Instruments' reputation for excellence and choose the LMV822QDGKRQ1 for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good mechanical strength and insulation properties, making the product durable and reliable.

Maximum Input Offset Voltage: 6000 uV

Low input offset voltage ensures accurate and precise amplification of signals, leading to high performance.

Maximum Average Bias Current (IIB): 0.14 uA

Low bias current minimizes power consumption and improves overall efficiency of the operational amplifier.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving time and reducing costs.

Nominal Supply Voltage / Vsup (V): 2.7

Optimal supply voltage ensures stable operation and performance of the operational amplifier.

Nominal Common Mode Reject Ratio: 85 dB

High common mode rejection ratio helps in rejecting noise and interference, improving the quality of the amplified signal.

Technology: BIPOLAR

Bipolar technology offers high precision and low noise performance, making it suitable for a wide range of applications.

Technical Specifications

Operational Amplifiers (Op Amps) LMV822QDGKRQ1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

3/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

6000 uV

Nominal Slew Rate:

1.7 V/us

Peak Bias Current:

140 nA

Maximum Bias Current (IIB) @25 °C:

100 nA

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

5.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

900 μA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

LMV822QDGKRQ1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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