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LMV715IDCKR

Texas Instruments

LMV715IDCKR by Texas Instruments

LMV715IDCKR by Texas Instruments is a voltage-feedback operational amplifier with a max input offset voltage of 3200uV and nominal common mode reject ratio of 75dB. It operates at supply voltages of 2.7/5V, making it ideal for industrial applications requiring low-bias amplification in compact designs. With a unity gain bandwidth of 5000kHz and low power consumption of 1.9mA, this op amp is suitable for precision signal processing in temperature-sensitive environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,976 parts In-Stock

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Digiode

USA . 4,087 parts In-Stock

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4,087

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Distributors (Availability)

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One Stop Electronics

USA . 1,005 parts In-Stock

1+ parts

$3.410

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$3.410

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Parana Technologies

USA . 2,262 parts In-Stock

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$4.324

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$4.745

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$4.324

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DigiPath Technology Company

USA . 1,914 parts In-Stock

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$4.761

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$4.761

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ChromeModa Solutions

Germany . 2,065 parts In-Stock

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$4.858

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$3.984

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2,065

$4.858

$3.984

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IDEA Electronic Components Group

UK . 788 parts In-Stock

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$4.858

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$4.372

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788

$4.858

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$4.372

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AZTECH Wire

Italy . 401 parts In-Stock

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$17.422

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$17.422

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QUARKTWIN TECHNOLOGY LTD

USA . 10,659 parts In-Stock

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Corphita

USA . 4,182 parts In-Stock

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Microchip USA

USA . 3,057 parts In-Stock

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Overview

Unlock exceptional performance and reliability with the LMV715IDCKR Operational Amplifier by Texas Instruments. Crafted using cutting-edge BICMOS technology, this amplifier delivers unparalleled precision and efficiency, making it ideal for a wide range of applications. From industrial automation to consumer electronics, this compact and versatile device ensures optimal signal amplification with minimal power consumption. Trust Texas Instruments to provide top-quality components that exceed expectations, revolutionizing your designs with seamless integration and superior functionality. Elevate your projects with the LMV715IDCKR and experience innovation at its finest.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the operational amplifier, making it suitable for a variety of applications.

Maximum Input Offset Voltage: 3200 uV

The low input offset voltage ensures accurate and precise signal processing, improving overall performance.

Surface Mount: YES

The surface mount feature allows for easy and efficient PCB assembly, saving time and effort during production.

Nominal Common Mode Reject Ratio: 75 dB

The high common mode reject ratio helps in eliminating unwanted noise and interference, resulting in cleaner output signals.

Nominal Supply Voltage / Vsup (V): 2.7

The low supply voltage requirement makes this operational amplifier energy-efficient and suitable for low power applications.

Power Supplies (V): 2.7/5

The option to use multiple power supply voltages adds flexibility to the operational amplifier's usage in various projects.

No. of Terminals: 6

Having 6 terminals provides enough connectivity options for input, output, and power supply connections, making it versatile for different circuit designs.

Maximum Supply Voltage Limit: 6 V

With a maximum supply voltage limit of 6V, this operational amplifier is safe to use in systems where the voltage may fluctuate within this range.

Maximum Operating Temperature: 85 °C

The wide operating temperature range allows the operational amplifier to function reliably in various environmental conditions.

Frequency Compensation: YES

Frequency compensation improves stability and prevents oscillation in the operational amplifier, ensuring consistent performance.

Minimum Voltage Gain: 6300

The high minimum voltage gain ensures strong signal amplification capabilities, suitable for applications requiring significant signal enhancement.

Minimum Operating Temperature: -40 °C

The ability to operate at low temperatures makes this operational amplifier suitable for use in harsh or extreme environments.

Terminal Finish: NICKEL PALLADIUM GOLD

The terminal finish provides excellent conductivity and resistance to corrosion, ensuring reliable connections for the operational amplifier.

Nominal Unity Gain Bandwidth: 5000 kHz

The high unity gain bandwidth allows the operational amplifier to maintain accurate performance over a wide range of frequencies.

Technology: BICMOS

BICMOS technology combines the advantages of bipolar and CMOS processes, providing high-speed operation and low power consumption in the operational amplifier.

Maximum Supply Current: 1.9 mA

The low supply current requirement ensures efficient power usage and extends the operational amplifier's battery life in portable devices.

Technical Specifications

Operational Amplifiers (Op Amps) LMV715IDCKR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BICMOS

Power Supply:

2.7/5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

75 dB

Input Offset Voltage Limit:

3200 uV

Minimum Voltage Gain:

6300

Nominal Slew Rate:

5 V/us

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

1.9 mA

Physical Characteristics

Length:

0.079 in (2 mm)

Width:

0.049 in (1.25 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

6

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP5/6,.08

Trade Compliance

LMV715IDCKR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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