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LMV552MMX

Texas Instruments

LMV552MMX by Texas Instruments

LMV552MMX by Texas Instruments is an Operational Amplifier with 4500uV Max Input Offset Voltage, 92dB Nominal CMRR, and 3000kHz Unity Gain Bandwidth. Ideal for automotive applications due to its -40 to 125 °C operating temperature range and small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,137 parts In-Stock

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Digiode

USA . 4,464 parts In-Stock

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Anansix

USA . 1,927 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 212 parts In-Stock

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$4.681

100+ parts

-

1k+ parts

$5.164

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212

$4.681

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$5.164

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DigiPath Technology Company

USA . 1,056 parts In-Stock

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$5.154

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$4.742

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1,056

$5.154

$4.742

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ChromeModa Solutions

Germany . 4,700 parts In-Stock

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$5.259

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$4.312

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$5.259

$4.312

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IDEA Electronic Components Group

UK . 1,582 parts In-Stock

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$5.259

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$4.733

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1,582

$5.259

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$4.733

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One Stop Electronics

USA . 1,458 parts In-Stock

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$9.410

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$9.410

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AZTECH Wire

Italy . 498 parts In-Stock

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$15.550

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498

$15.550

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A-Z Elektronik GmbH

Germany . 6,578 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,385 parts In-Stock

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Corphita

USA . 1,223 parts In-Stock

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Overview

Elevate your electronic projects with the LMV552MMX from Texas Instruments. As a leading manufacturer of operational amplifiers, Texas Instruments ensures top-notch quality and reliability in every product. The LMV552MMX is perfect for a wide range of applications, offering precision and efficiency for your designs. Experience the value of enhanced performance and versatility with this compact and powerful op amp. Trust Texas Instruments to deliver excellence in electronics, and unlock endless possibilities with the LMV552MMX.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for various applications.

Maximum Input Offset Voltage: 4500 uV

Low input offset voltage ensures accurate performance.

Maximum Average Bias Current (IIB): 0.038 uA

Low bias current minimizes power consumption.

Surface Mount: YES

Easy to mount on circuit boards, space-saving design.

Nominal Common Mode Reject Ratio: 92 dB

High common mode rejection ratio for improved signal quality.

Nominal Supply Voltage / Vsup (V): 3

Operates at a low supply voltage, suitable for low power applications.

Maximum Operating Temperature: 125 °C

Wide operating temperature range for versatile use.

Temperature Grade: AUTOMOTIVE

Suitable for automotive applications, ensuring reliability in harsh environments.

Nominal Unity Gain Bandwidth: 3000 kHz

High unity gain bandwidth for fast and accurate signal processing.

Nominal Slow Rate: 1 V/us

Low slew rate for stable and precise amplification.

Technical Specifications

Operational Amplifiers (Op Amps) LMV552MMX attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

2

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Unity Gain Bandwidth:

3 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

92 dB

Input Offset Voltage Limit:

4500 uV

Nominal Slew Rate:

1 V/us

Peak Bias Current:

38 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

40 s

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.09 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e0

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Trade Compliance

LMV552MMX Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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