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LMV321IDCKTG4

Texas Instruments

LMV321IDCKTG4 by Texas Instruments

LMV321IDCKTG4 by Texas Instruments is an Operational Amplifier with a Max Input Offset Voltage of 7000 uV, Nominal Common Mode Reject Ratio of 65 dB, and Nominal Voltage of 2.7 V. It is ideal for automotive applications due to its small size, low bias current (0.25 uA), and micropower technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 391,420 parts In-Stock

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391,420

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Vyrian

USA . 7,472 parts In-Stock

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7,472

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Digiode

USA . 3,192 parts In-Stock

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3,192

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Nova Conductors

Japan . 200 parts In-Stock

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200

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,252 parts In-Stock

1+ parts

$3.259

100+ parts

$302.664

1k+ parts

$2.933

10k+ parts

-

2,252

$3.259

$302.664

$2.933

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Ampacity Inc.

Singapore . 1,290 parts In-Stock

1+ parts

$3.410

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$3.410

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DigiPath Technology Company

USA . 1,719 parts In-Stock

1+ parts

$3.589

100+ parts

$3.302

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1,719

$3.589

$3.302

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ChromeModa Solutions

Germany . 6,472 parts In-Stock

1+ parts

$3.662

100+ parts

$3.003

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6,472

$3.662

$3.003

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IDEA Electronic Components Group

UK . 1,921 parts In-Stock

1+ parts

$3.662

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$3.296

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$3.662

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$3.296

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One Stop Electronics

USA . 1,474 parts In-Stock

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$4.410

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1,474

$4.410

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Semicontronic

India . 504 parts In-Stock

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$9.410

100+ parts

$9.175

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$9.128

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504

$9.410

$9.175

$9.128

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AZTECH Wire

Italy . 828 parts In-Stock

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$13.157

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828

$13.157

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A-Z Elektronik GmbH

Germany . 9,100 parts In-Stock

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Continental Prestige Electronics

USA . 2,230 parts In-Stock

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Corphita

USA . 1,558 parts In-Stock

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Argo Parts USA

USA . 1,551 parts In-Stock

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Bastille Electronics

Australia . 400 parts In-Stock

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400

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Microchip USA

USA . 128 parts In-Stock

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128

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Overview

Experience unparalleled performance with the LMV321IDCKTG4 operational amplifier by Texas Instruments. Crafted with precision and expertise, this op amp is designed to deliver superior quality and reliability in a wide range of applications. From automotive to industrial, this versatile component offers exceptional value, efficiency, and versatility. Trust in Texas Instruments for cutting-edge technology that exceeds expectations. Elevate your projects with the LMV321IDCKTG4 and experience innovation like never before.

Feature Benefit Bullets

Construction: STRANDED

Stranded construction provides flexibility and durability, making the wire less likely to break or fray during installation or use.

Rated Voltage: 300 V

With a high rated voltage, this wire is suitable for a variety of electrical applications, providing reliable performance.

Conductor Finish: TIN

Tin conductor finish enhances conductivity and corrosion resistance, ensuring efficient and long-lasting electrical connections.

Insulator Material: POLYVINYLCHLORIDE

Polyvinylchloride insulation offers good thermal and electrical insulation properties, protecting the conductor and ensuring safety.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature, this wire can handle elevated temperatures without compromising performance or safety.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows this wire to be used in cold environments without risk of damage or failure.

Wire Gauge (AWG): 30

The smaller wire gauge provides flexibility and allows for easy installation in tight spaces or intricate layouts.

Diameter: 1.12 mm

The small diameter of the wire makes it suitable for applications where space is limited, without sacrificing performance.

Length: 30.48 mm

Standard length ensures convenience and versatility in various electrical projects or applications.

Stranding: 7X38

The stranding configuration provides flexibility and resistance to bending or twisting, enhancing the wire's durability and lifespan.

Cross Section Area: 0.051 mm2

The appropriate cross-sectional area ensures efficient current carrying capacity and conductivity for the wire's intended use.

Conductor Material: COPPER ALLOY

Copper alloy conductor material offers excellent conductivity and durability, ensuring reliable electrical connections and performance.

Resistance: 0.331 ohm

Low resistance helps minimize power loss and heat generation, contributing to energy efficiency and optimal electrical performance.

Wire & Cable Type: FLEXIBLE CORD AND FIXTURE WIRE

Designed for flexibility and versatility, this wire type is ideal for use in a variety of electrical applications, offering ease of installation and maintenance.

Technical Specifications

Operational Amplifiers (Op Amps) LMV321IDCKTG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

3/5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

65 dB

Input Offset Voltage Limit:

7000 uV

Minimum Voltage Gain:

10000

Nominal Slew Rate:

1 V/us

Peak Bias Current:

250 nA

Maximum Bias Current (IIB) @25 °C:

250 nA

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

5.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

350 μA

Physical Characteristics

Length:

0.079 in (2 mm)

Width:

0.049 in (1.25 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

5

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP5/6,.08

Trade Compliance

LMV321IDCKTG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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