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LMP2012MDR

Texas Instruments

LMP2012MDR by Texas Instruments

LMP2012MDR by Texas Instruments is a military-grade operational amplifier with low-offset and low-bias features. It offers a max input offset voltage of 36uV, nominal unity gain bandwidth of 3000kHz, and operates at temperatures ranging from -55 to 125 °C. Ideal for applications requiring precise signal amplification in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,178 parts In-Stock

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Digiode

USA . 3,157 parts In-Stock

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3,157

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Distributors (Availability)

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Parana Technologies

USA . 258 parts In-Stock

1+ parts

$4.114

100+ parts

-

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$4.568

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258

$4.114

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$4.568

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DigiPath Technology Company

USA . 601 parts In-Stock

1+ parts

$4.530

100+ parts

$4.167

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601

$4.530

$4.167

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IDEA Electronic Components Group

UK . 986 parts In-Stock

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$4.622

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$4.160

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986

$4.622

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$4.160

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ChromeModa Solutions

Germany . 951 parts In-Stock

1+ parts

$4.622

100+ parts

$3.790

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951

$4.622

$3.790

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One Stop Electronics

USA . 606 parts In-Stock

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$5.410

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606

$5.410

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AZTECH Wire

Italy . 205 parts In-Stock

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$19.255

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205

$19.255

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Corphita

USA . 2,833 parts In-Stock

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Microchip USA

USA . 1,747 parts In-Stock

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Overview

Experience superior performance and reliability with the Texas Instruments LMP2012MDR operational amplifier. As a leading manufacturer in the industry, Texas Instruments delivers cutting-edge technology that excels in a variety of applications. Whether you're designing precision instrumentation or high-speed communication systems, the LMP2012MDR offers unmatched quality and efficiency. With features like low offset voltage, high common mode rejection ratio, and minimal bias current, this amplifier provides exceptional value and functionality for your projects. Trust Texas Instruments to meet your operational amplifier needs with the LMP2012MDR.

Feature Benefit Bullets

Maximum Input Offset Voltage: 36 uV

Low input offset voltage ensures accurate signal processing and minimal error in the output.

Maximum Average Bias Current (IIB): 0.000004 uA

Low bias current helps in maintaining stable operation and low power consumption.

Surface Mount: YES

Allows for easy integration into PCB designs and saves space in the circuit.

Nominal Common Mode Reject Ratio: 130 dB

High CMRR ensures that common mode noise is effectively suppressed, resulting in cleaner output signals.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard supply voltage making it compatible with a wide range of applications.

Maximum Supply Voltage Limit: 5.8 V

Ensures safe operation within the specified voltage range, preventing damage to the device.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for demanding environments.

Frequency Compensation: YES

Improves stability and bandwidth of the amplifier, making it more reliable in various operating conditions.

Minimum Voltage Gain: 31622.777

High voltage gain allows for amplification of low-input signals with minimal distortion.

Terminal Position: UPPER

Facilitates easy connectivity and placement in the circuit layout.

Temperature Grade: MILITARY

Meets military-grade standards for reliability and performance in harsh environments.

Total Dose (V): 50k Rad(Si)

Designed to withstand radiation exposure, making it suitable for space and nuclear applications.

Nominal Unity Gain Bandwidth: 3000 kHz

High unity gain bandwidth ensures fast signal processing and response time.

Architecture: VOLTAGE-FEEDBACK

Provides precise voltage amplification and stability, improving overall performance.

Maximum Supply Current: 2.4 mA

Low supply current consumption for efficient power management.

Nominal Slow Rate: 4 V/us

Slow slew rate ensures gradual change in output voltage, preventing signal distortion.

Technical Specifications

Operational Amplifiers (Op Amps) LMP2012MDR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

Yes

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

3 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

130 dB

Minimum Common Mode Rejection Ratio (CMRR ):

95 dB

Input Offset Voltage Limit:

36 uV

Minimum Voltage Gain:

31622.777

Nominal Slew Rate:

4 V/us

Peak Bias Current:

4 pA

Maximum Bias Current (IIB) @25 °C:

4 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

5.8 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

2.4 mA

Physical Characteristics

Terminal Position:

Upper

Terminal Form:

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Total Ionizing Dose:

50k Rad(Si)

Standards

JESD-30 Code:

X-XUUC-N

Packaging and Shipping

Package Code:

DIE

Package Style:

Uncased Chip

Trade Compliance

LMP2012MDR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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