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LM5113TMX/NOPB

Texas Instruments

LM5113TMX/NOPB by Texas Instruments

LM5113TMX/NOPB by Texas Instruments is a MOSFET gate driver with a max supply voltage of 5.5V and output polarity as TRUE. It features an interface IC type of HALF BRIDGE BASED MOSFET DRIVER, suitable for automotive applications due to its temperature grade and high side driver capability. With a compact package style and low power consumption, it offers fast turn-on/off times for efficient operation in various electronic systems.

Median Price

$0.422

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 17 parts In-Stock

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$0.422

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17

$0.422

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Chip1Stop

Japan . 22 parts In-Stock

1+ parts

$2.960

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22

$2.960

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Verical

USA . 17 parts In-Stock

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$0.415

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17

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$0.415

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Distributors (In-Stock)

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Digiode

USA . 3,979 parts In-Stock

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$2.760

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3,979

$2.760

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Nova Conductors

Japan . 550 parts In-Stock

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$2.776

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550

$2.776

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Chip Stock

USA . 5,606 parts In-Stock

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5,606

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Vyrian

USA . 3,571 parts In-Stock

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3,571

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 3,192 parts In-Stock

1+ parts

$2.614

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3,192

$2.614

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Continental Prestige Electronics

USA . 5,177 parts In-Stock

1+ parts

$2.776

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$2.721

5,177

$2.776

-

-

$2.721

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$2.776

100+ parts

$2.721

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-

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1,000

$2.776

$2.721

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Argo Parts USA

USA . 771 parts In-Stock

1+ parts

$2.776

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771

$2.776

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Corohmni

South Africa . 934 parts In-Stock

1+ parts

$5.216

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934

$5.216

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Ampacity Inc.

Singapore . 19 parts In-Stock

1+ parts

$5.480

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19

$5.480

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Parana Technologies

USA . 678 parts In-Stock

1+ parts

$11.186

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$11.631

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678

$11.186

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$11.631

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DigiPath Technology Company

USA . 426 parts In-Stock

1+ parts

$12.317

100+ parts

$11.331

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426

$12.317

$11.331

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ChromeModa Solutions

Germany . 1,937 parts In-Stock

1+ parts

$12.568

100+ parts

$10.306

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1,937

$12.568

$10.306

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IDEA Electronic Components Group

UK . 1,935 parts In-Stock

1+ parts

$12.568

100+ parts

$11.940

1k+ parts

$11.311

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1,935

$12.568

$11.940

$11.311

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AZTECH Wire

Italy . 803 parts In-Stock

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$16.619

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803

$16.619

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A-Z Elektronik GmbH

Germany . 7,374 parts In-Stock

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7,374

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Alle Elektronik GmbH

Germany . 4,916 parts In-Stock

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4,916

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Perfect Parts

USA . 896 parts In-Stock

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896

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Overview

Unlock the power of your electronics with the LM5113TMX/NOPB by Texas Instruments, a high-quality MOSFET Gate Driver designed to elevate your projects to new heights. With Texas Instruments' reputation for excellence and innovation, this driver offers unmatched reliability and performance. Ideal for automotive applications, this driver provides precise control and efficiency, ensuring optimal functionality in any project. Experience the value and benefits of the LM5113TMX/NOPB and take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the MOSFET gate driver, ensuring long-term reliability.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Maximum Supply Voltage: 5.5 V

Supports a wide range of applications and ensures compatibility with various power supplies.

Package Shape: RECTANGULAR

Facilitates easy integration into existing electronic circuits and designs.

Power Supplies (V): 5

Suitable for use with standard 5V power supplies, making it a versatile option for numerous applications.

No. of Terminals: 12

Provides flexibility and compatibility with different configurations and circuit designs.

Minimum Supply Voltage: 4.5 V

Ensures reliable operation even at lower supply voltages, enhancing performance in various conditions.

Maximum Operating Temperature: 125 °C

Allows the MOSFET gate driver to function optimally even in high-temperature environments, increasing its reliability.

Output Characteristics: OPEN-DRAIN

Enables easy interfacing with other components and devices, offering versatility in system design.

Minimum Operating Temperature: -40 °C

Ensures the MOSFET gate driver remains operational even in extreme cold temperatures, improving its overall reliability.

Terminal Finish: TIN SILVER COPPER

Provides excellent conductivity and corrosion resistance, ensuring effective signal transmission and longevity of the product.

Terminal Position: BOTTOM

Facilitates easy PCB layout and integration into circuits, simplifying the overall design process.

Maximum Seated Height: 0.675 mm

Compact design allows for space-saving in tight or constrained applications.

Width: 1.7255 mm

Narrow profile enables compact PCB layout and efficient use of space in electronic systems.

Output Polarity: TRUE

Ensures consistent and reliable signal output, contributing to the stability and performance of the MOSFET gate driver.

High Side Driver: YES

Supports driving high-side MOSFETs, expanding the range of applications and circuit configurations where the driver can be used.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for efficient soldering during manufacturing processes, contributing to the reliability and quality of the end product.

Peak Reflow Temperature °C: 260

Ensures proper soldering and reliability of the connections during the manufacturing process.

Length: 1.875 mm

Compact size enables easy integration into a variety of electronic devices and applications without taking up much space.

Temperature Grade: AUTOMOTIVE

Designed to meet automotive industry standards for temperature and performance, making it suitable for automotive applications.

Maximum Output Current: 5 A

Capable of driving high-current loads, providing versatility and compatibility with a wide range of electronic components.

Terminal Form: BALL

Ensures easy and reliable connection to the PCB, simplifying the assembly process and improving overall product quality.

Maximum Supply Current: 3 mA

Low supply current requirement helps in minimizing power consumption, making the MOSFET gate driver energy-efficient.

Nominal Supply Voltage: 5 V

Standard 5V supply voltage ensures compatibility with a wide range of electronic systems and power sources.

Turn-on Time: 0.045 us

Fast turn-on time ensures quick response and precise control over the MOSFET operation, enhancing overall performance.

Terminal Pitch: 0.4 mm

Fine pitch allows for high-density mounting on the PCB, saving space and enabling compact design layouts.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

Half-bridge configuration provides efficient driving of MOSFETs, enabling versatile control and operation in various applications.

Turn-off Time: 0.045 us

Fast turn-off time ensures quick switching and control of the MOSFET, contributing to overall system efficiency and performance.

Technical Specifications

MOSFET Gate Drivers LM5113TMX/NOPB attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-PBGA-B12

JESD-609 Code:

e1

Length:

1.875 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

12

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-DRAIN

Maximum Output Current:

5 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA12,4X4,16

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

.675 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

3 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.045 us

Turn-on Time:

.045 us

Width:

1.7255 mm

Trade Compliance

LM5113TMX/NOPB Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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