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LM4041A12IDBZRG4

Texas Instruments

LM4041A12IDBZRG4 by Texas Instruments

LM4041A12IDBZRG4 by Texas Instruments is a voltage reference IC with a min output voltage of 1.223 V and max operating temperature of 85°C. It is a small outline, thin profile package suitable for industrial applications requiring precise voltage regulation within a tolerance of 0.1%.

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1k+

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Vyrian

USA . 8,703 parts In-Stock

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Bristol Electronics

USA . 3,000 parts In-Stock

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Digiode

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One Stop Electronics

USA . 1,259 parts In-Stock

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Semicontronic

India . 697 parts In-Stock

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Ampacity Inc.

Singapore . 1,455 parts In-Stock

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Parana Technologies

USA . 352 parts In-Stock

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IDEA Electronic Components Group

UK . 1,782 parts In-Stock

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ChromeModa Solutions

Germany . 918 parts In-Stock

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AZTECH Wire

Italy . 855 parts In-Stock

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Metaverse IC Inc.

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Corphita

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DigiPath Technology Company

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Microchip USA

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Overview

Enhance your electronic designs with the LM4041A12IDBZRG4 by Texas Instruments. Known for their top-quality components, Texas Instruments delivers reliable voltage references that are essential for a wide range of applications. This small outline, thin profile package offers precise output voltage and temperature stability, making it ideal for industrial use. With a minimal supply voltage requirement and excellent voltage tolerance, this voltage reference provides value and peace of mind to customers looking for high-performance components. Upgrade your projects with the LM4041A12IDBZRG4 and experience the difference Texas Instruments can make in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal and electrical insulation, ensuring reliable performance.

Surface Mount: YES

Easy integration onto circuit boards, saving space and simplifying assembly.

Maximum Operating Temperature: 85 °C

Suitable for industrial applications where higher temperatures may be encountered.

Minimum Output Voltage: 1.223 V

Stable and precise output voltage reference for accurate measurements.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

Provides excellent conductivity and corrosion resistance for long-term reliability.

Maximum Seated Height: 1.12 mm

Low profile design enables compact and space-efficient circuit layouts.

Temperature Grade: INDUSTRIAL

Suitable for use in harsh environments and industrial settings.

Technology: BIPOLAR

Offers stable and accurate voltage references with low noise levels.

Nominal Output Voltage: 1.225 V

Provides a precise and stable reference voltage for various applications.

Technical Specifications

Voltage References LM4041A12IDBZRG4 attributes and parameters. Explore more Voltage References devices from Texas Instruments

Specs

Additional Features:

OUTPUT VOLTAGE ADJUSTABLE FROM 1.225V TO 10V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e4

Length:

2.92 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

3

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Voltage:

1.226 V

Minimum Output Voltage:

1.223 V

Nominal Output Voltage:

1.225 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TO-236

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.12 mm

Sub-Category:

Voltage References

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

1.225 V

Surface Mount:

YES

Technology:

BIPOLAR

Max Voltage Temp Coef:

100 ppm/Cel

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trim or Adjustable Output (V):

NO

Maximum Voltage Tolerance:

.1 %

Width (mm):

1.3 mm

Trade Compliance

LM4041A12IDBZRG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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