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JANTX4N24A

Texas Instruments

JANTX4N24A by Texas Instruments

JANTX4N24A by Texas Instruments is a SINGLE optocoupler with a max forward current of 0.04 A and collector-emitter breakdown voltage of 35 V. With a nominal current transfer ratio of 150%, it is ideal for applications requiring high isolation voltage up to 1000 V, such as in industrial control systems and power supplies.

Median Price

$38.960

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

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Verical

USA . 8,886 parts In-Stock

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Mouser Electronics

USA . 84 parts In-Stock

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Master Electronics

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Chip1Stop

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Freelance Electronics

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Nova Conductors

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Digiode

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IBS Electronics

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Vyrian

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Chip Stock

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First Choice Components Inc.

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Legend Electronics Inc.

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Beltway Electronics Company

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PAR Electronics

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Mil-Aero Solutions, Inc.

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Cyclops Electronics Ltd

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Component Sense

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Bristol Electronics

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Aztec Data Supply Inc.

USA . 225 parts In-Stock

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$0.091

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Parana Technologies

USA . 1,193 parts In-Stock

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$0.108

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$1.463

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DigiPath Technology Company

USA . 2,113 parts In-Stock

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$0.119

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$0.109

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ChromeModa Solutions

Germany . 2,203 parts In-Stock

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$0.099

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IDEA Electronic Components Group

UK . 2,046 parts In-Stock

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$0.871

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Ampacity Inc.

Singapore . 10,359 parts In-Stock

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Corphita

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Continental Prestige Electronics

USA . 2,711 parts In-Stock

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Corohmni

South Africa . 739 parts In-Stock

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Component Stockers USA

USA . 9,307 parts In-Stock

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$29.030

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$26.440

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$28.330

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$28.330

Neutron USA

USA . 50 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kepictronics

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Perfect Parts

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Argo Parts USA

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Metaverse IC Inc.

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Benley Electronics

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Bastille Electronics

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Overview

Discover the superior quality and reliability of the JANTX4N24A by Texas Instruments, a top-tier manufacturer known for cutting-edge technology. As an Optocoupler Transistor Output, this product offers unparalleled performance in various applications. With a maximum isolation voltage of 1000V and a nominal current transfer ratio of 150%, customers can trust in the precision and efficiency of this component. Trust Texas Instruments to deliver exceptional value and benefits with the JANTX4N24A, providing peace of mind for all your electronic needs.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration ensures easy integration and simplifies circuit design.

Maximum Forward Current: 0.04 A

High maximum forward current allows for reliable performance in various applications.

Optoelectronic Type: TRANSISTOR OUTPUT OPTOCOUPLER

Transistor output optocoupler provides high speed and excellent switching characteristics.

Maximum Operating Temperature: 125 °C

High maximum operating temperature enables operation in harsh environments.

Minimum Operating Temperature: -55 °C

Wide range of minimum operating temperature ensures versatility in different conditions.

Maximum Dark Current: 100 nA

Low maximum dark current ensures reliable performance and minimizes power consumption.

Minimum Collector-emitter Breakdown Voltage: 35 V

High minimum collector-emitter breakdown voltage provides robustness against voltage spikes.

Nominal Current Transfer Ratio: 150 %

High nominal current transfer ratio ensures accurate signal transmission.

Maximum Isolation Voltage: 1000 V

High maximum isolation voltage provides safety and protection against high voltages.

Technical Specifications

Optocoupler Transistor Outputs JANTX4N24A attributes and parameters. Explore more Optocoupler Transistor Outputs devices from Texas Instruments

Specs

Minimum Collector-emitter Breakdown Voltage:

35 V

Configuration:

SINGLE

Nominal Current Transfer Ratio:

150 %

Maximum Dark Current:

100 nA

Maximum Forward Current:

.04 A

Maximum Isolation Voltage:

1000 V

No. of Elements:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Optoelectronic Type:

Trade Compliance

JANTX4N24A Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8541.40.80.00

SB

8541.40.80.00

NSN

5980-01-087-2886, 5980010872886

NIIN

010872886

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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