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ISO107

Texas Instruments

ISO107 by Texas Instruments

ISO107 by Texas Instruments is an Isolation Amplifier with 16 terminals, 20 MHz bandwidth, and 2500V isolation voltage. It has a rectangular package shape made of ceramic and metal-sealed cofired material. Ideal for applications requiring high common mode voltage tolerance and reliable signal isolation in industrial settings.

Median Price

$700.000

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 12 parts In-Stock

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$700.000

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12

$700.000

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Vyrian

USA . 8,488 parts In-Stock

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8,488

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Digiode

USA . 4,663 parts In-Stock

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4,663

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R&J Components

USA . 4 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 93 parts In-Stock

1+ parts

$3.747

100+ parts

-

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$4.245

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93

$3.747

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$4.245

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DigiPath Technology Company

USA . 1,452 parts In-Stock

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$4.126

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$3.796

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1,452

$4.126

$3.796

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ChromeModa Solutions

Germany . 2,799 parts In-Stock

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$4.210

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$3.452

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2,799

$4.210

$3.452

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IDEA Electronic Components Group

UK . 1,489 parts In-Stock

1+ parts

$4.210

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$3.789

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1,489

$4.210

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$3.789

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One Stop Electronics

USA . 1,438 parts In-Stock

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$9.410

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1,438

$9.410

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AZTECH Wire

Italy . 657 parts In-Stock

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$9.641

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QUARKTWIN TECHNOLOGY LTD

USA . 7,624 parts In-Stock

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Microchip USA

USA . 2,497 parts In-Stock

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Corphita

USA . 1,522 parts In-Stock

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1,522

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Assy Fe

Spain . 75 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 4 parts In-Stock

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Overview

Elevate your electronic designs with the ISO107 by Texas Instruments, a cutting-edge Isolation Amplifier that delivers unparalleled quality and precision. Crafted with high-grade materials and advanced technology, this amplifier ensures reliable performance and safety in applications where isolation is critical. From industrial control systems to medical devices, the ISO107 offers superior isolation voltage of 2500V, wide bandwidth of 20MHz, and low supply current of 75mA, making it an essential component for your projects. Experience peace of mind and exceptional results with the ISO107 - the ultimate choice for isolation amplification.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides high durability and reliability, making the isolation amplifier suitable for robust industrial environments.

Nominal Supply Voltage / Vsup (V): 15

The nominal supply voltage of 15V ensures stable and consistent operation of the isolation amplifier.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this isolation amplifier can withstand high temperature environments without compromising performance.

Nominal Bandwidth (3dB): 20 MHz

The high nominal bandwidth of 20 MHz allows for fast and accurate signal processing in applications where rapid data acquisition is crucial.

Minimum Isolation Voltage: 2500 V

The high minimum isolation voltage of 2500V ensures effective isolation of signals, making the amplifier suitable for high voltage applications.

Technical Specifications

Isolation Amplifiers ISO107 attributes and parameters. Explore more Isolation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

Hybrid

Power Supply:

±15 V

Total Functions:

1

Sub-Category:

Isolation Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

20 MHz

Maximum Common Mode Voltage:

2.5 KV

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-25 °C (-13 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

75 mA

Minimum Isolation Voltage:

2.5 KV

Physical Characteristics

Length:

1.61 in (40.895 mm)

Width:

0.9 in (22.86 mm)

Maximum Seated Height:

0.37 in (9.4 mm)

Total Terminals:

16

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Ceramic, Metal-Sealed Cofired

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-CDIP-T16

Packaging and Shipping

Package Code:

DIP

Package Shape:

Package Style:

In-Line

Package Equivalence Code:

DIP16/32,.9

Trade Compliance

ISO107 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

NSN

3895-01-161-0084, 3895011610084

NIIN

011610084

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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