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ISO100CP

Texas Instruments

ISO100CP by Texas Instruments

ISO100CP by Texas Instruments is an Isolation Amplifier with 18 terminals, 60 MHz bandwidth, and 750V isolation voltage. It operates at -25 to 85 °C, with +-15V power supplies and a max common mode voltage of 10V. Ideal for applications requiring high isolation levels and precise signal amplification in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,412 parts In-Stock

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Vyrian

USA . 1,636 parts In-Stock

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1,636

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Fibra_Brandt Electronic GMBH

Germany . 4 parts In-Stock

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First Choice Components Inc.

USA . 2 parts In-Stock

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LWI Electronics Inc

India . 1 parts In-Stock

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One Stop Electronics

USA . 2,778 parts In-Stock

1+ parts

$0.410

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$0.410

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Parana Technologies

USA . 1,109 parts In-Stock

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$3.526

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$4.050

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$3.526

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$4.050

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DigiPath Technology Company

USA . 714 parts In-Stock

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$3.883

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714

$3.883

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IDEA Electronic Components Group

UK . 1,985 parts In-Stock

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$3.962

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$3.566

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$3.962

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ChromeModa Solutions

Germany . 235 parts In-Stock

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$3.962

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$3.249

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235

$3.962

$3.249

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AZTECH Wire

Italy . 523 parts In-Stock

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$12.468

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523

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Corphita

USA . 3,018 parts In-Stock

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3,018

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Glotronic Ltd.

UK . 1,740 parts In-Stock

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Microchip USA

USA . 290 parts In-Stock

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Kepictronics

USA . 270 parts In-Stock

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270

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Assy Fe

Spain . 150 parts In-Stock

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150

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Montclair Electronics, Inc.

USA . 1 parts In-Stock

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Overview

Experience unparalleled quality and precision with the Texas Instruments ISO100CP isolation amplifier. Crafted with ceramic and metal-sealed cofired materials, this rectangular package houses cutting-edge technology that ensures reliable performance in a variety of applications. With a nominal bandwidth of 60 MHz and a minimum isolation voltage of 750 V, this amplifier offers unmatched value and benefits for customers seeking top-notch isolation solutions. Trust in Texas Instruments for superior products that deliver exceptional results every time.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Ceramic and metal-sealed cofired package body material provides durability and reliability for long-term use.

Nominal Supply Voltage / Vsup (V): 15

Operating at a nominal supply voltage of 15V ensures stable performance within the specified range.

Nominal Bandwidth (3dB): 60 MHz

With a high bandwidth of 60 MHz, this isolation amplifier is suitable for applications requiring fast signal processing.

Minimum Isolation Voltage: 750 V

Having a minimum isolation voltage of 750V ensures safe isolation of signals in high voltage environments.

Technical Specifications

Isolation Amplifiers ISO100CP attributes and parameters. Explore more Isolation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

BIPOLAR

Power Supply:

±15 V

Total Functions:

1

Sub-Category:

Isolation Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

60 MHz

Maximum Common Mode Voltage:

10 V

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-25 °C (-13 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

20 mA

Minimum Isolation Voltage:

750 V

Physical Characteristics

Length:

0.992 in (25.195 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.197 in (5 mm)

Total Terminals:

18

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Ceramic, Metal-Sealed Cofired

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-CDIP-T18

Packaging and Shipping

Package Code:

DIP

Package Shape:

Package Style:

In-Line

Package Equivalence Code:

DIP18,.3

Trade Compliance

ISO100CP Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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