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INA337AIDGKTG4

Texas Instruments

INA337AIDGKTG4 by Texas Instruments

Texas Instruments' INA337AIDGKTG4 is an instrumentation amplifier with a max input offset voltage of 140uV and bias current of 0.002uA. Ideal for automotive applications, it operates at temperatures ranging from -40 to 125 °C and has a nominal bandwidth of 0.001 MHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 8,000 parts In-Stock

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Vyrian

USA . 5,259 parts In-Stock

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Digiode

USA . 1,450 parts In-Stock

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1,450

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Nova Conductors

Japan . 870 parts In-Stock

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870

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One Stop Electronics

USA . 805 parts In-Stock

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$0.410

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805

$0.410

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Parana Technologies

USA . 1,259 parts In-Stock

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$1.329

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$2.064

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$1.329

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DigiPath Technology Company

USA . 1,110 parts In-Stock

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$1.463

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$1.346

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$1.463

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ChromeModa Solutions

Germany . 5,893 parts In-Stock

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$1.493

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$1.224

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$1.493

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IDEA Electronic Components Group

UK . 1,669 parts In-Stock

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$1.493

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$1.344

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Corohmni

South Africa . 215 parts In-Stock

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$7.011

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215

$7.011

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Ampacity Inc.

Singapore . 1,118 parts In-Stock

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$7.410

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AZTECH Wire

Italy . 397 parts In-Stock

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$19.658

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Continental Prestige Electronics

USA . 3,830 parts In-Stock

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Microchip USA

USA . 1,485 parts In-Stock

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Argo Parts USA

USA . 1,349 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Corphita

USA . 191 parts In-Stock

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191

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Overview

Experience unmatched precision and reliability with the INA337AIDGKTG4 from Texas Instruments, a leading manufacturer in the industry. As part of the Instrumentation Amplifiers category, this product offers exceptional performance in a variety of applications. With a maximum input offset voltage of 140 uV and a nominal supply voltage of 5V, customers can trust in the quality and accuracy of this amplifier for their projects. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides light weight and durable packaging for the product, making it suitable for portable and rugged applications.

Maximum Input Offset Voltage: 140 uV

Low input offset voltage ensures accurate signal processing and measurement.

Surface Mount: YES

Facilitates easy and efficient PCB assembly, saving time and cost in production.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage for compatibility with many systems and applications.

Maximum Non Linearity: 0.01 %

Provides high linearity in signal amplification, ensuring minimal distortion in output signals.

Maximum Operating Temperature: 125 °C

Can operate in high temperature environments, suitable for industrial and automotive applications.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high reliability in signal amplification.

Minimum Common Mode Reject Ratio: 100 dB

Provides excellent rejection of common mode noise, ensuring accurate and clean signal amplification.

Technical Specifications

Instrumentation Amplifiers INA337AIDGKTG4 attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

1

Sub-Category:

Instrumentation Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

1 kHz

Minimum Common Mode Rejection Ratio (CMRR ):

100 dB

Input Offset Voltage Limit:

140 µV

Peak Bias Current:

2 nA

Maximum Bias Current (IIB) @25 °C:

2 nA

Maximum Supply Current:

3.7 mA

Minimum Voltage Gain:

0.1

Nominal Voltage Gain:

100

Maximum Voltage Gain:

10000

Maximum Non Linearity:

0.01 %

Maximum Input Offset Current (IIO):

2 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

5.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Reflow Peak Time Limit:

30 s

Peak Reflow Temperature:

260 °C (500 °F)

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold Silver

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

INA337AIDGKTG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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