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INA851RGTR

Texas Instruments

INA851RGTR by Texas Instruments

INA851RGTR by Texas Instruments is a 16-terminal instrumentation amplifier with a max input offset voltage of 35uV and nominal voltage of 15V. With a bandwidth of 22MHz, it's ideal for applications requiring high precision amplification in temperature-sensitive environments. The chip carrier package makes it suitable for surface mount designs with limited space constraints.

Median Price

$8.390

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 242,320 parts In-Stock

1+ parts

$5.814

100+ parts

$4.740

1k+ parts

$3.160

10k+ parts

-

242,320

$5.814

$4.740

$3.160

-

Mouser Electronics

USA . 1,104 parts In-Stock

1+ parts

$8.390

100+ parts

$5.520

1k+ parts

$5.010

10k+ parts

$4.850

1,104

$8.390

$5.520

$5.010

$4.850

DigiKey

USA . 4,221 parts In-Stock

1+ parts

$9.420

100+ parts

$6.230

1k+ parts

$6.115

10k+ parts

-

4,221

$9.420

$6.230

$6.115

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 30 parts In-Stock

1+ parts

$4.988

100+ parts

-

1k+ parts

-

10k+ parts

-

30

$4.988

-

-

-

Digiode

USA . 4,513 parts In-Stock

1+ parts

$5.523

100+ parts

-

1k+ parts

-

10k+ parts

-

4,513

$5.523

-

-

-

Vyrian

USA . 82,255 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

82,255

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 82,312 parts In-Stock

1+ parts

$4.940

100+ parts

-

1k+ parts

-

10k+ parts

-

82,312

$4.940

-

-

-

Semicontronic

India . 82,282 parts In-Stock

1+ parts

$4.940

100+ parts

$4.816

1k+ parts

$4.792

10k+ parts

-

82,282

$4.940

$4.816

$4.792

-

Continental Prestige Electronics

USA . 160 parts In-Stock

1+ parts

$4.988

100+ parts

-

1k+ parts

-

10k+ parts

$4.888

160

$4.988

-

-

$4.888

Advanced Electronics

New Zealand . 270 parts In-Stock

1+ parts

$5.150

100+ parts

$4.893

1k+ parts

$4.892

10k+ parts

-

270

$5.150

$4.893

$4.892

-

Corphita

USA . 1,250 parts In-Stock

1+ parts

$5.233

100+ parts

-

1k+ parts

-

10k+ parts

-

1,250

$5.233

-

-

-

Microchip USA

USA . 2,061 parts In-Stock

1+ parts

$14.670

100+ parts

$14.460

1k+ parts

$14.350

10k+ parts

$14.250

2,061

$14.670

$14.460

$14.350

$14.250

Argo Parts USA

USA . 669 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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669

-

-

-

-

Corohmni

South Africa . 61 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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61

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-

-

Overview

Experience top-notch performance and precision with the Texas Instruments INA851RGTR instrumentation amplifier. Known for their high-quality products, Texas Instruments delivers excellence in every aspect. Ideal for a wide range of applications, this amplifier offers unparalleled value and benefits to customers. Trust in the reliability and efficiency of the INA851RGTR for all your amplification needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable and long-lasting applications.

Maximum Input Offset Voltage: 35 uV

Low input offset voltage ensures high precision and accuracy in signal amplification, making it suitable for sensitive measurement tasks.

Maximum Average Bias Current (IIB): 0.018 uA

Low bias current minimizes signal distortion and improves the overall performance of the amplifier, making it reliable for critical applications.

Surface Mount: YES

Surface mount feature allows for easy and convenient installation on circuit boards, saving time and effort in the assembly process.

Nominal Supply Voltage / Vsup (V): 15

The nominal supply voltage of 15V provides sufficient power for signal amplification while maintaining efficiency and reliability.

No. of Terminals: 16

With 16 terminals, this instrumentation amplifier offers flexibility in connection options and enables versatile use in various circuits and systems.

Maximum Input Offset Current (IIO): 0.006 uA

Low input offset current ensures minimal error in the amplified output signal, enhancing the accuracy and precision of the measurements.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

The compact chip carrier and heat sink/slug design with a very thin profile optimize space utilization and heat dissipation, ideal for compact electronic devices.

Maximum Non Linearity: 0.0002%

The low non-linearity of 0.0002% ensures accurate signal amplification and minimal distortion, making it suitable for high-precision applications.

Maximum Supply Voltage Limit: 20 V

The maximum supply voltage limit of 20V protects the amplifier from potential damage due to overvoltage, ensuring long-term reliability and safety.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this instrumentation amplifier can withstand high-temperature environments, making it versatile for various industrial applications.

Technical Specifications

Instrumentation Amplifiers INA851RGTR attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Performance Specifications

Nominal Bandwidth (3dB):

22 MHz

Nominal Slew Rate:

37 V/us

Minimum Common Mode Rejection Ratio (CMRR ):

120 dB

Input Offset Voltage Limit:

35 µV

Peak Bias Current:

18 nA

Maximum Bias Current (IIB) @25 °C:

20 nA

Maximum Supply Current:

9 mA

Minimum Voltage Gain:

0.2

Maximum Voltage Gain:

1000

Maximum Non Linearity:

0.0002 %

Maximum Input Offset Current (IIO):

6 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

20 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-20 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.039 in (1 mm)

Total Terminals:

16

Terminal Pitch:

0.02 in (0.5 mm)

Terminal Position:

Quad

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Standards

JESD-30 Code:

S-PQCC-N16

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Chip Carrier, Heat Sink/Slug, Very Thin Profile

Package Equivalence Code:

LCC16,.12SQ,20

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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