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INA322EA/2K5G4

Texas Instruments

INA322EA/2K5G4 by Texas Instruments

INA322EA/2K5G4 by Texas Instruments is an instrumentation amplifier with 11000 uV max input offset voltage, 0.00001 uA max average bias current, and 5 V nominal voltage. Ideal for military applications due to its -55 to 125 °C operating temperature range and CMOS technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 7,582 parts In-Stock

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Digiode

USA . 1,021 parts In-Stock

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Nova Conductors

Japan . 200 parts In-Stock

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Corohmni

South Africa . 38 parts In-Stock

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$2.648

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38

$2.648

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Ampacity Inc.

Singapore . 281 parts In-Stock

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$3.410

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Parana Technologies

USA . 501 parts In-Stock

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$4.081

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$4.541

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$4.081

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Semicontronic

India . 583 parts In-Stock

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$4.410

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$4.300

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$4.278

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$4.410

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IDEA Electronic Components Group

UK . 344 parts In-Stock

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$4.585

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$4.126

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ChromeModa Solutions

Germany . 152 parts In-Stock

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$4.585

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$3.760

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One Stop Electronics

USA . 366 parts In-Stock

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$7.410

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AZTECH Wire

Italy . 476 parts In-Stock

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$18.010

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Lixinc

USA . 19,063 parts In-Stock

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Perfect Parts

USA . 5,637 parts In-Stock

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Authorized Procurement Solutions

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Continental Prestige Electronics

USA . 2,178 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,154 parts In-Stock

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DigiPath Technology Company

USA . 1,895 parts In-Stock

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$4.134

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Alle Elektronik GmbH

Germany . 1,436 parts In-Stock

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Argo Parts USA

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Corphita

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Elevate your instrumentation amplifier game with the INA322EA/2K5G4 by Texas Instruments. Crafted with precision and expertise, this top-of-the-line product offers unparalleled quality and reliability. Perfect for a wide range of applications, this instrument amplifier delivers exceptional performance and accuracy. Whether you're in the automotive industry or working on industrial automation projects, the INA322EA/2K5G4 is sure to exceed your expectations. Experience the value and benefits that only Texas Instruments can provide with this innovative and versatile product. Elevate your projects with the best in the business.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for portable or rugged applications.

Maximum Input Offset Voltage: 11000 uV

Low input offset voltage ensures high precision and accuracy in signal amplification.

Maximum Average Bias Current (IIB): 0.00001 uA

Low bias current minimizes interference and distortion in the amplified signal.

Surface Mount: YES

Surface mount capability enables easy and convenient installation on circuit boards, saving space and reducing assembly time.

Nominal Supply Voltage / Vsup (V): 5

Operates reliably at a nominal supply voltage of 5V, suitable for a wide range of applications.

Power Supplies (V): 3/5

Compatibility with 3V and 5V power supplies offers flexibility in the choice of power source.

No. of Terminals: 8

Having 8 terminals allows for versatile connection options and signal routing.

Maximum Input Offset Current (IIO): 0.0001 uA

Low input offset current ensures minimal error in signal amplification, improving overall accuracy.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Compact package style with a thin profile and shrink pitch design saves space on the circuit board and enhances overall system efficiency.

Maximum Non Linearity: 0.015 %

Low non-linearity ensures faithful reproduction of the input signal with minimal distortion.

Maximum Supply Voltage Limit: 7.5 V

Operates within a safe supply voltage limit of 7.5V to prevent damage to the amplifier.

Maximum Operating Temperature: 125 °C

High maximum operating temperature range ensures reliable performance even in harsh environmental conditions.

Minimum Voltage Gain: 5

Offering a minimum voltage gain of 5 ensures signal amplification capabilities for a wide range of input signals.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for operation in extreme cold environments.

Terminal Position: DUAL

Dual terminal position provides flexibility in signal routing and connectivity, accommodating various circuit configurations.

Maximum Voltage Gain: 1000

High maximum voltage gain allows for amplification of weak signals to a level suitable for further processing or analysis.

Maximum Seated Height: 1.1 mm

Low seated height enables the amplifier to be used in space-constrained applications or where a slim profile is desired.

Width: 3 mm

Compact width makes the amplifier suitable for applications requiring a small footprint.

Nominal Bandwidth (3dB): 0.5 MHz

Decent bandwidth ensures that a wide range of signal frequencies can be accurately amplified.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds, facilitating reflow soldering during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance ensures robustness during the assembly process.

Length: 3 mm

Compact length complements the overall small form factor of the amplifier.

Temperature Grade: MILITARY

Military-grade temperature tolerance ensures reliability in extreme temperature conditions, making it suitable for demanding applications.

Minimum Common Mode Reject Ratio: 60 dB

High common mode rejection ratio eliminates common mode noise from the output signal, ensuring signal integrity.

Technology: CMOS

CMOS technology offers low power consumption, high input impedance, and excellent noise performance, making it ideal for precision instrumentation applications.

Terminal Form: GULL WING

Gull wing terminal form provides secure and reliable solder connections for easy integration into circuit boards.

Amplifier Type: INSTRUMENTATION AMPLIFIER

Specifically designed for precise and accurate amplification of small differential signals, making it ideal for instrumentation and measurement applications.

Nominal Slow Rate: 0.4 V/us

Nominal slow rate of 0.4 V/us ensures gradual and stable amplification of input signals, minimizing sudden voltage spikes.

Terminal Pitch: 0.65 mm

Terminal pitch of 0.65 mm allows for easy connections and compatibility with standard PCB layouts.

Nominal Voltage Gain: 25

Nominal voltage gain of 25 provides a balanced amplification ratio suitable for various input signal levels.

Moisture Sensitivity Level (MSL): 2

MSL level 2 indicates the device can withstand standard moisture exposure levels during storage and handling, ensuring long-term reliability.

Technical Specifications

Instrumentation Amplifiers INA322EA/2K5G4 attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

1

Sub-Category:

Instrumentation Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

500 kHz

Nominal Slew Rate:

0.4 V/us

Minimum Common Mode Rejection Ratio (CMRR ):

60 dB

Input Offset Voltage Limit:

11 mV

Peak Bias Current:

10 pA

Minimum Voltage Gain:

5

Nominal Voltage Gain:

25

Maximum Voltage Gain:

1000

Maximum Non Linearity:

0.015 %

Maximum Input Offset Current (IIO):

100 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7.5 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Reflow Peak Time Limit:

30 s

Peak Reflow Temperature:

260 °C (500 °F)

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

INA322EA/2K5G4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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