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INA322EA/250G4

Texas Instruments

INA322EA/250G4 by Texas Instruments

INA322EA/250G4 by Texas Instruments is an instrumentation amplifier with 11000 uV max input offset voltage, 0.00001 uA max average bias current, and 5 V nominal voltage. Ideal for military applications due to its -55 to 125 °C operating temperature range and small outline package style.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip Stock

USA . 6,130 parts In-Stock

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Vyrian

USA . 3,759 parts In-Stock

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Digiode

USA . 1,403 parts In-Stock

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Nova Conductors

Japan . 41 parts In-Stock

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One Stop Electronics

USA . 1,578 parts In-Stock

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$0.410

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$0.410

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Ampacity Inc.

Singapore . 1,492 parts In-Stock

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$1.410

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Corohmni

South Africa . 466 parts In-Stock

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$1.755

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Parana Technologies

USA . 13 parts In-Stock

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$3.006

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$279.192

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$2.706

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DigiPath Technology Company

USA . 175 parts In-Stock

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$3.310

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$3.046

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IDEA Electronic Components Group

UK . 897 parts In-Stock

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$3.378

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$3.040

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ChromeModa Solutions

Germany . 610 parts In-Stock

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$3.378

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$2.770

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AZTECH Wire

Italy . 414 parts In-Stock

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$18.931

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QUARKTWIN TECHNOLOGY LTD

USA . 9,244 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,639 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,426 parts In-Stock

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Microchip USA

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Argo Parts USA

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Corphita

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Aranea Global

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Continental Prestige Electronics

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Overview

Enhance your instrumentation projects with the INA322EA/250G4 by Texas Instruments. With a track record of excellence in manufacturing, Texas Instruments delivers top-quality instrumentation amplifiers for a wide range of applications. The INA322EA/250G4 offers customers exceptional value, benefits, and advantages, making it the ideal choice for precision measurement and signal processing needs. Upgrade your projects today with the reliability and performance of Texas Instruments' INA322EA/250G4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components of the instrumentation amplifier.

Maximum Input Offset Voltage: 11000 uV

A low input offset voltage helps in minimizing errors and inaccuracies in the amplifier's output signal.

Maximum Average Bias Current (IIB): 0.00001 uA

A low bias current ensures minimal power consumption and accurate signal processing.

Surface Mount: YES

Surface mounting capability makes installation of the amplifier on circuit boards easier and more efficient.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V is commonly used in many electronic systems, making integration of this amplifier easier.

Power Supplies (V): 3/5

The availability of both 3V and 5V power supplies allows flexibility in the amplifier's operation in different systems.

Maximum Input Offset Current (IIO): 0.0001 uA

Low input offset current helps in maintaining signal accuracy and stability in the amplifier.

Nominal Voltage Gain: 25

A moderate voltage gain of 25 makes this amplifier suitable for a wide range of applications requiring signal amplification.

Technology: CMOS

CMOS technology offers low power consumption, high input impedance, and good noise performance, making this amplifier energy-efficient and reliable.

Temperature Grade: MILITARY

Military-grade temperature rating ensures reliable operation in extreme environmental conditions, making this amplifier suitable for rugged applications.

Technical Specifications

Instrumentation Amplifiers INA322EA/250G4 attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

1

Sub-Category:

Instrumentation Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

500 kHz

Nominal Slew Rate:

0.4 V/us

Minimum Common Mode Rejection Ratio (CMRR ):

60 dB

Input Offset Voltage Limit:

11 mV

Peak Bias Current:

10 pA

Maximum Bias Current (IIB) @25 °C:

10 pA

Minimum Voltage Gain:

5

Nominal Voltage Gain:

25

Maximum Voltage Gain:

1000

Maximum Non Linearity:

0.015 %

Maximum Input Offset Current (IIO):

100 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7.5 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Reflow Peak Time Limit:

30 s

Peak Reflow Temperature:

260 °C (500 °F)

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold Silver

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

INA322EA/250G4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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