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INA321E/2K5G4

Texas Instruments

INA321E/2K5G4 by Texas Instruments

INA321E/2K5G4 by Texas Instruments is an instrumentation amplifier with 2200uV max input offset voltage, 0.00001uA max average bias current, and 5V nominal voltage. Ideal for military applications due to its -55 to 125 °C operating temperature range and CMOS technology.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Chip Stock

USA . 30,270 parts In-Stock

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Digiode

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Vyrian

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Cyclops Electronics Ltd

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Nova Conductors

Japan . 750 parts In-Stock

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Semicontronic

India . 1,017 parts In-Stock

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$0.410

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$0.400

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$0.398

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One Stop Electronics

USA . 398 parts In-Stock

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Ampacity Inc.

Singapore . 733 parts In-Stock

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$2.410

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Parana Technologies

USA . 23 parts In-Stock

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$3.362

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$3.889

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DigiPath Technology Company

USA . 2,240 parts In-Stock

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$3.701

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$3.405

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ChromeModa Solutions

Germany . 4,148 parts In-Stock

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$3.777

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$3.097

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IDEA Electronic Components Group

UK . 973 parts In-Stock

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Corohmni

South Africa . 469 parts In-Stock

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AZTECH Wire

Italy . 299 parts In-Stock

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A-Z Elektronik GmbH

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Lixinc

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Corphita

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Microchip USA

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Continental Prestige Electronics

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Bastille Electronics

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Argo Parts USA

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Overview

Experience excellence in signal conditioning with the Texas Instruments INA321E/2K5G4 instrumentation amplifier. Crafted with precision and reliability, this amplifier offers unparalleled performance in a wide range of applications. From industrial automation to medical devices, this versatile amplifier ensures accurate signal processing with minimal power consumption. Trust in Texas Instruments to provide you with the quality and value you deserve. Elevate your designs with the Texas Instruments INA321E/2K5G4 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to environmental factors, making the product suitable for various applications.

Maximum Input Offset Voltage: 2200 uV

Low input offset voltage ensures accurate and precise measurements, especially in sensitive instrumentation applications.

Maximum Average Bias Current (IIB): 0.00001 uA

Ultra-low bias current minimizes errors in the measurement process, ensuring high accuracy.

Surface Mount: YES

Allows for easy and convenient integration onto PCBs, saving space and reducing assembly time.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard supply voltage, compatible with most systems and circuits.

Power Supplies (V): 3/5

Flexible power supply options offer compatibility with a range of systems and environments.

No. of Terminals: 8

Sufficient terminals for connecting to external components and circuits, ensuring versatility.

Maximum Input Offset Current (IIO): 0.00001 uA

Low input offset current contributes to high precision and accuracy in signal processing.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Compact package design saves space on the PCB and enhances portability and flexibility of application.

Maximum Non Linearity: 0.015 %

Low non-linearity ensures accurate signal amplification and processing, vital for reliable measurements.

Maximum Supply Voltage Limit: 7.5 V

Safe operating voltage limit protects the amplifier from damage, ensuring longer lifespan and reliability.

Maximum Operating Temperature: 125 °C

Wide operating temperature range enables the product to be used in various environmental conditions without performance degradation.

Maximum Bias Current (IIB) @25°C: 0.00001 uA

Ultra-low bias current maintains signal integrity and accuracy even at different operating temperatures.

Minimum Voltage Gain: 5

Provides flexibility in signal amplification, catering to a wide range of input signal levels.

Minimum Operating Temperature: -55 °C

Capable of operating in extreme low-temperature environments, expanding the range of applications.

Terminal Finish: NICKEL PALLADIUM GOLD SILVER

High-quality terminal finish ensures reliable electrical connections and corrosion resistance.

Terminal Position: DUAL

Dual terminal positions allow for versatile placement and easy integration into different circuit layouts.

Maximum Voltage Gain: 1000

High voltage gain capability provides versatile amplification options for a wide range of signals.

Maximum Seated Height: 1.1 mm

Low profile design saves space and enables the product to be used in compact applications.

Width: 3 mm

Compact width dimension facilitates space-efficient PCB layout and integration.

Nominal Bandwidth (3dB): 0.5 MHz

Wide bandwidth ensures the amplifier can process signals accurately across a range of frequencies.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for reliable soldering during assembly without damaging the components, ensuring durability.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability for robust soldering processes, ensuring product reliability.

Length: 3 mm

Compact length dimension for efficient PCB layout and space-saving integration.

Temperature Grade: MILITARY

Designed to meet stringent military standards for reliability, durability, and performance in demanding environments.

Minimum Common Mode Reject Ratio: 77 dB

High common mode rejection ratio ensures accurate differential signal processing and minimizes interference.

Technology: CMOS

CMOS technology offers low power consumption, high reliability, and compatibility with various digital circuits.

Terminal Form: GULL WING

Gull wing terminal form allows for easy surface mounting and reliable solder connections.

Amplifier Type: INSTRUMENTATION AMPLIFIER

Specifically designed for precise and accurate signal amplification in instrumentation and measurement applications.

Maximum Supply Current: 0.07 mA

Low supply current consumption for energy-efficient operation, suitable for battery-powered applications.

Packing Method: TR

Tape and reel packaging method for easy handling, storage, and automated assembly.

Nominal Slow Rate: 0.4 V/us

Provides controlled and stable signal amplification rate, maintaining accuracy in dynamic signal processing.

Terminal Pitch: 0.65 mm

Compact terminal pitch for efficient PCB layout and space-saving integration.

Nominal Voltage Gain: 25

Optimal voltage gain for a variety of signal amplification requirements in instrumentation applications.

Moisture Sensitivity Level (MSL): 2

MSL level 2 indicates moderate sensitivity to moisture, requiring standard handling procedures during storage and assembly.

Technical Specifications

Instrumentation Amplifiers INA321E/2K5G4 attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

1

Sub-Category:

Instrumentation Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

500 kHz

Nominal Slew Rate:

0.4 V/us

Minimum Common Mode Rejection Ratio (CMRR ):

77 dB

Input Offset Voltage Limit:

2.2 mV

Peak Bias Current:

10 pA

Maximum Bias Current (IIB) @25 °C:

10 pA

Maximum Supply Current:

70 μA

Minimum Voltage Gain:

5

Nominal Voltage Gain:

25

Maximum Voltage Gain:

1000

Maximum Non Linearity:

0.015 %

Maximum Input Offset Current (IIO):

10 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7.5 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Reflow Peak Time Limit:

30 s

Peak Reflow Temperature:

260 °C (500 °F)

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold Silver

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

INA321E/2K5G4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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