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INA241B2IDDFR

Texas Instruments

INA241B2IDDFR by Texas Instruments

Texas Instruments' INA241B2IDDFR is an Operational Amplifier with 150uV Max Input Offset Voltage, 45uA Max Average Bias Current, and 130dB Nominal CMRR. Ideal for applications requiring precise signal amplification in a compact form factor.

Median Price

$2.023

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 42,007 parts In-Stock

1+ parts

$2.023

100+ parts

$1.671

1k+ parts

$0.903

10k+ parts

-

42,007

$2.023

$1.671

$0.903

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 29 parts In-Stock

1+ parts

$1.460

100+ parts

-

1k+ parts

-

10k+ parts

-

29

$1.460

-

-

-

Digiode

USA . 2,448 parts In-Stock

1+ parts

$1.922

100+ parts

-

1k+ parts

-

10k+ parts

-

2,448

$1.922

-

-

-

Vyrian

USA . 7,394 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,394

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bastille Electronics

Australia . 50 parts In-Stock

1+ parts

$1.460

100+ parts

$1.387

1k+ parts

$1.318

10k+ parts

$1.299

50

$1.460

$1.387

$1.318

$1.299

Continental Prestige Electronics

USA . 6,569 parts In-Stock

1+ parts

$1.460

100+ parts

-

1k+ parts

-

10k+ parts

$1.431

6,569

$1.460

-

-

$1.431

Argo Parts USA

USA . 4,307 parts In-Stock

1+ parts

$1.460

100+ parts

-

1k+ parts

-

10k+ parts

-

4,307

$1.460

-

-

-

Ampacity Inc.

Singapore . 23,623 parts In-Stock

1+ parts

$1.720

100+ parts

-

1k+ parts

-

10k+ parts

-

23,623

$1.720

-

-

-

Semicontronic

India . 20,626 parts In-Stock

1+ parts

$1.720

100+ parts

$1.677

1k+ parts

$1.668

10k+ parts

-

20,626

$1.720

$1.677

$1.668

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Corphita

USA . 4,334 parts In-Stock

1+ parts

$1.821

100+ parts

-

1k+ parts

-

10k+ parts

-

4,334

$1.821

-

-

-

Corohmni

South Africa . 927 parts In-Stock

1+ parts

$13.067

100+ parts

-

1k+ parts

-

10k+ parts

-

927

$13.067

-

-

-

Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$19.946

100+ parts

$18.949

1k+ parts

$18.949

10k+ parts

-

500

$19.946

$18.949

$18.949

-

Overview

Elevate your electronic designs with the INA241B2IDDFR operational amplifier from Texas Instruments, known for its impeccable quality and reliability. This versatile op amp offers a wide range of applications, providing precision and efficiency in various circuits. With low-offset and high common mode rejection ratio, this amplifier ensures optimal performance in your projects. Experience the value and benefits of this compact and powerful component, designed to meet your demanding requirements with ease. Trust Texas Instruments to deliver excellence in every aspect of your design process.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the operational amplifier, ensuring longevity and reliability.

Maximum Input Offset Voltage: 150 uV

Low input offset voltage ensures accuracy in signal processing, making this operational amplifier suitable for precision applications.

Maximum Average Bias Current (IIB): 45 uA

Low bias current helps in reducing power consumption and maintaining stability in the circuit.

Surface Mount: YES

Surface mount capability allows for easy integration onto printed circuit boards, saving space and simplifying the manufacturing process.

Nominal Common Mode Reject Ratio: 130 dB

High common mode rejection ratio ensures minimal interference from common-mode signals, resulting in cleaner output signals.

Nominal Supply Voltage / Vsup (V): 5

Operates on a standard supply voltage, making it compatible with a wide range of electronic systems.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows for reliable performance in various environmental conditions.

Nominal Unity Gain Bandwidth: 1100 kHz

High unity gain bandwidth enables the operational amplifier to handle fast-changing signals with minimal distortion.

Technical Specifications

Operational Amplifiers (Op Amps) INA241B2IDDFR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Total Functions:

1

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

Yes

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.1 MHz

Maximum Common Mode Voltage:

110 V

Nominal Common Mode Rejection Ratio (CMRR ):

130 dB

Minimum Common Mode Rejection Ratio (CMRR ):

120 dB

Input Offset Voltage Limit:

150 uV

Nominal Slew Rate:

5 V/us

Peak Bias Current:

45 uA

Maximum Bias Current (IIB) @25 °C:

45 uA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

22 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

3.2 mA

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.11

Trade Compliance

INA241B2IDDFR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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