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INA2322EA/2K5

Texas Instruments

INA2322EA/2K5 by Texas Instruments

INA2322EA/2K5 by Texas Instruments is a CMOS instrumentation amplifier with 14 terminals. It has a max input offset voltage of 11000 uV and a nominal voltage of 5V, making it suitable for military applications requiring precise signal amplification in small spaces. With a max non-linearity of 0.015% and a bandwidth of 0.5 MHz, this amplifier offers high performance in harsh environments.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 6,598 parts In-Stock

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Digiode

USA . 578 parts In-Stock

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Nova Conductors

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Ampacity Inc.

Singapore . 1,630 parts In-Stock

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$0.410

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One Stop Electronics

USA . 412 parts In-Stock

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$0.410

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Semicontronic

India . 1,310 parts In-Stock

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$2.410

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$2.350

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$2.338

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Parana Technologies

USA . 155 parts In-Stock

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$5.756

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$6.550

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Corohmni

South Africa . 698 parts In-Stock

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ChromeModa Solutions

Germany . 4,386 parts In-Stock

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IDEA Electronic Components Group

UK . 929 parts In-Stock

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AZTECH Wire

Italy . 377 parts In-Stock

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Component Stockers USA

USA . 733 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Advanced Electronics

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Corphita

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DigiPath Technology Company

USA . 691 parts In-Stock

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Microchip USA

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Bastille Electronics

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Overview

Enhance your precision measurement applications with the Texas Instruments INA2322EA/2K5 Instrumentation Amplifier. Manufactured by a trusted industry leader, this high-quality amplifier offers unmatched accuracy and reliability. Ideal for a wide range of uses, from industrial automation to medical devices, this amplifier delivers exceptional performance with minimal power consumption. Experience the value and benefits of the Texas Instruments INA2322EA/2K5 and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material is durable and lightweight, making the product easy to handle and reliable for long-term use.

Maximum Input Offset Voltage: 11000 uV

Low offset voltage ensures accurate measurement and minimal distortion in signal processing.

Maximum Average Bias Current (IIB): 0.00001 uA

Low bias current helps in maintaining signal integrity by minimizing signal interference.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards.

Nominal Supply Voltage / Vsup (V): 5

Suitable supply voltage for the amplifier to operate efficiently without risking damage.

Maximum Operating Temperature: 125 °C

High operating temperature range ensures the amplifier can function in diverse and demanding environments.

Nominal Bandwidth (3dB): 0.5 MHz

Wide bandwidth allows for accurate and fast signal processing, making it suitable for various applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the amplifier energy-efficient and reliable.

Amplifier Type: INSTRUMENTATION AMPLIFIER

Instrumentation amplifiers are designed for precise and accurate signal amplification, making them ideal for measurement and instrumentation applications.

Technical Specifications

Instrumentation Amplifiers INA2322EA/2K5 attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

2

Sub-Category:

Instrumentation Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

500 kHz

Nominal Slew Rate:

0.4 V/us

Minimum Common Mode Rejection Ratio (CMRR ):

60 dB

Input Offset Voltage Limit:

11 mV

Peak Bias Current:

10 pA

Minimum Voltage Gain:

5

Nominal Voltage Gain:

25

Maximum Voltage Gain:

1000

Maximum Non Linearity:

0.015 %

Maximum Input Offset Current (IIO):

100 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7.5 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Physical Characteristics

Length:

0.197 in (5 mm)

Width:

0.173 in (4.4 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

14

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP14,.25

Trade Compliance

INA2322EA/2K5 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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