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INA126EA/2K5G4

Texas Instruments

INA126EA/2K5G4 by Texas Instruments

INA126EA/2K5G4 by Texas Instruments is an instrumentation amplifier with a max input offset voltage of 500uV and a nominal voltage of ±15V. It features a small outline package style, suitable for industrial applications requiring high precision amplification with low bias current. The amplifier has a bandwidth of 0.2MHz and offers excellent common mode rejection ratio of 83dB.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 17,180 parts In-Stock

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Vyrian

USA . 7,025 parts In-Stock

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Digiode

USA . 3,833 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Distributors (Availability)

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Advanced Electronics

New Zealand . 95 parts In-Stock

1+ parts

$1.004

100+ parts

$0.954

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$0.954

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95

$1.004

$0.954

$0.954

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Corohmni

South Africa . 20 parts In-Stock

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$2.897

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20

$2.897

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Parana Technologies

USA . 580 parts In-Stock

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$3.873

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$359.693

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$3.486

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580

$3.873

$359.693

$3.486

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DigiPath Technology Company

USA . 314 parts In-Stock

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$4.265

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IDEA Electronic Components Group

UK . 807 parts In-Stock

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$4.352

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$3.917

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ChromeModa Solutions

Germany . 104 parts In-Stock

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$4.352

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$3.569

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$4.352

$3.569

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Semicontronic

India . 1,481 parts In-Stock

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$6.410

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$6.250

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$6.218

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One Stop Electronics

USA . 682 parts In-Stock

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$6.410

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Ampacity Inc.

Singapore . 842 parts In-Stock

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$7.410

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$7.410

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AZTECH Wire

Italy . 561 parts In-Stock

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$9.776

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QUARKTWIN TECHNOLOGY LTD

USA . 25,732 parts In-Stock

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Continental Prestige Electronics

USA . 3,679 parts In-Stock

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Microchip USA

USA . 3,522 parts In-Stock

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Kepictronics

USA . 2,600 parts In-Stock

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Argo Parts USA

USA . 1,573 parts In-Stock

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Perfect Parts

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Corphita

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Bastille Electronics

Australia . 18 parts In-Stock

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Overview

Experience superior performance and precision with the Texas Instruments INA126EA/2K5G4 instrumentation amplifier. Designed for industrial applications, this small outline, thin profile amplifier offers a wide voltage gain range of up to 10000 while maintaining excellent common mode rejection ratio. With minimal bias current and low input offset voltage, this amplifier delivers accurate results in a variety of settings. Trust in Texas Instruments' reputation for quality and reliability, and unlock the full potential of your next project with the INA126EA/2K5G4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the amplifier, making it suitable for various environments.

Maximum Input Offset Voltage: 500 uV

Ensures minimal error in the output signal due to input voltage differences, resulting in accurate measurements.

Maximum Average Bias Current (IIB): 0.05 uA

Low bias current ensures that the amplifier does not draw excessive current from the power supply, improving efficiency.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving space and reducing assembly time.

Nominal Supply Voltage / Vsup (V): 15

Provides a stable operating voltage for the amplifier, ensuring consistent performance.

Power Supplies (V): +-15

Bipolar power supplies offer versatility and flexibility in powering the amplifier.

No. of Terminals: 8

Sufficient terminals for connecting external components and ensuring proper signal transmission.

Maximum Input Offset Current (IIO): 0.005 uA

Low input offset current reduces signal distortion and improves accuracy in signal amplification.

Maximum Non Linearity: 0.012 %

Low non-linearity ensures that the output signal faithfully represents the input signal, maintaining signal integrity.

Maximum Supply Voltage Limit: 18 V

Provides overvoltage protection, safeguarding the amplifier from potential damage.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows for use in various industrial applications.

Minimum Voltage Gain: 5

Provides flexibility in amplification settings, allowing for a wide range of signal amplification.

Minimum Operating Temperature: -40 °C

Suitable for use in low-temperature environments without compromising performance.

Terminal Finish: Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Provides a reliable and corrosion-resistant finish on the terminals, ensuring long-term performance.

Maximum Voltage Gain: 10000

High voltage gain capability allows for amplification of weak signals with minimal distortion.

Width: 3 mm

Compact size enables easy integration into circuit board designs with limited space.

Nominal Bandwidth (3dB): 0.2 MHz

High bandwidth allows for amplification of high-frequency signals with precision and accuracy.

Temperature Grade: INDUSTRIAL

Designed to withstand harsh industrial environments and temperature fluctuations.

Nominal Voltage Gain: 100

Provides a suitable level of amplification for a wide range of input signals.

Technical Specifications

Instrumentation Amplifiers INA126EA/2K5G4 attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Power Supply:

±15 V

Total Functions:

1

Sub-Category:

Instrumentation Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

200 kHz

Nominal Slew Rate:

0.4 V/us

Minimum Common Mode Rejection Ratio (CMRR ):

83 dB

Input Offset Voltage Limit:

500 µV

Peak Bias Current:

50 nA

Maximum Bias Current (IIB) @25 °C:

25 nA

Maximum Supply Current:

200 μA

Minimum Voltage Gain:

5

Nominal Voltage Gain:

100

Maximum Voltage Gain:

10000

Maximum Non Linearity:

0.012 %

Maximum Input Offset Current (IIO):

5 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold/Silver

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

INA126EA/2K5G4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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