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INA115BUG4

Texas Instruments

INA115BUG4 by Texas Instruments

INA115BUG4 by Texas Instruments is an instrumentation amplifier with 50uV max input offset voltage, 1MHz nominal bandwidth, and 10000 max voltage gain. Ideal for industrial applications requiring precise signal amplification in a compact package.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 6,271 parts In-Stock

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Digiode

USA . 3,631 parts In-Stock

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Parana Technologies

USA . 1,756 parts In-Stock

1+ parts

$4.010

100+ parts

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$4.475

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$4.010

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$4.475

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One Stop Electronics

USA . 1,531 parts In-Stock

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$4.410

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$4.410

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DigiPath Technology Company

USA . 1,177 parts In-Stock

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$4.416

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$4.063

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$4.416

$4.063

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ChromeModa Solutions

Germany . 4,793 parts In-Stock

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$4.506

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$3.695

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$4.506

$3.695

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IDEA Electronic Components Group

UK . 1,401 parts In-Stock

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$4.506

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$4.055

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1,401

$4.506

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AZTECH Wire

Italy . 268 parts In-Stock

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$12.558

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QUARKTWIN TECHNOLOGY LTD

USA . 10,941 parts In-Stock

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Microchip USA

USA . 4,459 parts In-Stock

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Corphita

USA . 1,355 parts In-Stock

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Perfect Parts

USA . 28 parts In-Stock

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Overview

Unleash the power of precision with the Texas Instruments INA115BUG4 Instrumentation Amplifier. Designed with top-notch quality and expertise, this versatile amplifier is perfect for a wide range of applications. From medical devices to industrial machinery, the possibilities are endless. Experience unparalleled accuracy and reliability with a maximum input offset voltage of 50 uV and a nominal supply voltage of 15 V. Trust in Texas Instruments to deliver exceptional performance with the INA115BUG4, providing you with unmatched value and efficiency in every application. Elevate your projects today with this cutting-edge amplifier.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the instrumentation amplifier, ensuring reliable performance over time.

Maximum Input Offset Voltage: 50 uV

Low input offset voltage helps in minimizing errors in the measurement and ensures accurate output signals.

Maximum Average Bias Current (IIB): 0.002 uA

Low bias current helps in reducing power consumption and improving the overall efficiency of the amplifier.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on PCBs, saving space and simplifying the manufacturing process.

Nominal Supply Voltage / Vsup (V): 15

Stable supply voltage ensures consistent performance of the amplifier under various operating conditions.

No. of Terminals: 16

Sufficient number of terminals allow for proper connections and integration with other components in the circuit.

Nominal Bandwidth (3dB): 1 MHz

Wide bandwidth allows for high-speed signal processing, making this instrumentation amplifier suitable for a variety of applications.

Maximum Voltage Gain: 10000

High voltage gain amplifies the input signal accurately, making this amplifier suitable for precision measurement applications.

Technical Specifications

Instrumentation Amplifiers INA115BUG4 attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Power Supply:

±15 V

Total Functions:

1

Sub-Category:

Instrumentation Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

1 MHz

Nominal Slew Rate:

0.6 V/us

Minimum Common Mode Rejection Ratio (CMRR ):

115 dB

Input Offset Voltage Limit:

50 µV

Peak Bias Current:

2 nA

Maximum Bias Current (IIB) @25 °C:

2 nA

Maximum Supply Current:

3 mA

Minimum Voltage Gain:

1

Nominal Voltage Gain:

10

Maximum Voltage Gain:

10000

Maximum Non Linearity:

0.002 %

Maximum Input Offset Current (IIO):

2 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Reflow Peak Time Limit:

30 s

Peak Reflow Temperature:

260 °C (500 °F)

Physical Characteristics

Length:

0.406 in (10.3 mm)

Width:

0.295 in (7.5 mm)

Maximum Seated Height:

0.104 in (2.65 mm)

Total Terminals:

16

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

3

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP16,.4

Trade Compliance

INA115BUG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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